Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM
Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM
复制标题
使用 HAADF-STEM 同时定量 InGaNAs 中的铟和氮浓度
DOI：
10.1017/s1431927614013051
复制
发表时间：
2014
影响因子：
2.8
通讯作者：
A. Rosenauer
中科院分区：
文献类型：
--
作者：
T. Grieb;K. Müller;E. Cadel;A. Beyer;M. Schowalter;E. Talbot;K. Volz;A. Rosenauer
为了明确地评估In x Ga 1 −x N y As 1 −y中铟和氮的浓度，必须通过实验获得两个独立的信息源。基于高分辨率扫描透射电子显微镜（STEM）的高角度环形暗场（HAADF）检测器拍摄的图像的InGaNAs量子阱的应变状态，以及其特征HAADF散射强度确定。通过应用弹性理论和HAADF强度的应变状态进行评估，用于与多层模拟比较。两者的组合允许确定的化学组成，其中的结果是根据X射线衍射测量，三维原子探针断层扫描，并进一步透射电子显微镜分析。HAADF-STEM评估用于研究As稳定化退火对InGaNAs/GaAs样品的影响。光致发光测量显示退火引起的发射波长的蓝移。化学分析排除了元素扩散的起源的能量转移，而不是结果是在协议的基础上退火诱导的原子相邻配置的再分配模型。
Abstract To unambiguously evaluate the indium and nitrogen concentrations in In x Ga1−x N y As1−y , two independent sources of information must be obtained experimentally. Based on high-resolution scanning transmission electron microscopy (STEM) images taken with a high-angle annular dark-field (HAADF) detector the strain state of the InGaNAs quantum well is determined as well as its characteristic HAADF-scattering intensity. The strain state is evaluated by applying elasticity theory and the HAADF intensity is used for a comparison with multislice simulations. The combination of both allows for determination of the chemical composition where the results are in accordance with X-ray diffraction measurements, three-dimensional atom probe tomography, and further transmission electron microscopy analysis. The HAADF-STEM evaluation was used to investigate the influence of As-stabilized annealing on the InGaNAs/GaAs sample. Photoluminescence measurements show an annealing-induced blue shift of the emission wavelength. The chemical analysis precludes an elemental diffusion as origin of the energy shift—instead the results are in agreement with a model based on an annealing-induced redistribution of the atomic next-neighbor configuration.
闪锌矿三元 III-V 和 II-VI 半导体中成分敏感 002 反射的散射幅度和静态原子校正因子
DOI：
10.1107/s0108767311037779
发表时间：
2012
期刊：
Acta crystallographica. Section A, Foundations of crystallography
影响因子：
--
作者：
Marco Schowalter;Knut Müller;Andreas Rosenauer
通讯作者：
Andreas Rosenauer