Design Challenges of SiC Devices for Low- and Medium-Voltage DC-DC Converters
Design Challenges of SiC Devices for Low- and Medium-Voltage DC-DC Converters
复制标题
低压和中压 DC-DC 转换器的 SiC 器件的设计挑战
DOI：
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
R. D. De Doncker
中科院分区：
文献类型：
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作者：
G. Engelmann;Alexander Sewergin;M. Neubert;R. D. De Doncker
碳化硅（SiC）器件被认为是开发适用于低压和中压应用的高效紧凑型DC-DC转换器的关键推动因素。除了它们的高温能力和低导通损耗，它们提供了上级开关characteristics.This强调SiC器件的设计挑战，在低和中压范围内所产生的快速开关速度。首先，1200 V SiC器件的开关特性和不同的漏电感的详细测量结果。的结果进行评估方面的开关损耗以及瞬态电压和电流过冲。示出了作为漏感的函数的开关行为的影响。漏感也影响功率模块和dc-dc转换器的谐振频率。这是决定EMI滤波器尺寸的关键设计因素。它的意义是基于一个800 V的DC-DC转换器，使用市售的SiC MOSFET。此外，零电压开关被强调，以减少对开关行为的模块寄生元件的影响。然而，中压DC-DC转换器中10 kV SiC MOSFET的性能表明，需要大量的换向能量才能确保成功的软开关过渡。
Silicon carbide (SiC) devices are considered as key enablers for the development of highly efficient and compact dc-dc converters for low- and medium-voltage applications. Besides their high temperature capability and low conduction losses, they provide superior switching characteristics.This paper emphasizes design challenges of SiC devices in the low- and medium-voltage range arising from their fast switching speeds. First, detailed measurement results on the switching characteristics of 1200 V SiC devices and different leakage inductances are presented. The results are assessed with regard to the switching losses as well as the transient voltage and current overshoots. The impact on the switching behavior as function of leakage inductances is shown. The leakage inductances also influence the resonance frequency of the power module and dc-dc converters. This is a crucial design aspect to determine the size of the EMI filters. Its significance is demonstrated based on an 800 V dc-dc converter using commercially available SiC MOSFETs. Furthermore, zero-voltage switching is emphasized to reduce the impact of the module parasitic elements on the switching behavior. The performance of 10 kV SiC MOSFETs in a medium-voltage dc-dc converter shows, however, that a significant amount of commutation energy is required to ensure a successful soft-switching transition.
创新可靠的电源模块：未来趋势和技术演进
影响因子：
6.3
作者：
Boettcher;Conrad;De Doncker
通讯作者：
De Doncker