Effects of leakage current on the short circuit current in the dual-junction solar cells

Effects of leakage current on the short circuit current in the dual-junction solar cells
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漏电流对双结太阳能电池短路电流的影响

DOI:
10.1007/s11082-014-9925-z
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发表时间:
2014-04
影响因子:
3
通讯作者:
Yang H.
Yang H.
中科院分区:
工程技术4区
文献类型:
--
作者:
Sun Y. R.;Li K. L.;Dong J. R.;Zeng X. L.;Yu S. Z.;Zhao Y. M.;Zhao C. Y.;Yang H.

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研究了双结GaInP/GaAs太阳能电池的短路电流特性,实验结果表明,GaInP顶电池的光电流高于GaAs底电池的光电流,并且当发生漏电流时,器件的光电流通常不受GaAs底电池的限制。电流与电压(电流-电压)曲线的太阳能电池是基于单个二极管模型和模拟太阳光Ishows依赖漏水的太阳光,也就是说,照片之间的Iis的砷化镓和GaInP太阳光在漏水的砷化镓子室,它等于砷化镓的照片目前亚晶胞的漏水的GaInP亚晶胞,并低于当前的照片GaInP亚晶胞在砷化镓和GaInP太阳光都漏水。
The characteristics of short circuit current (Iin dual-junction GaInP/GaAs solar cells have been investigated, and the experimental results show that the photo current of GaInP top cell is higher than that of GaAs bottom cell and the Iof the device is usually not limited by GaAs bottom cell if a leakage current occurs. The current versus voltage (I–V) curves of the solar cell were simulated with subcells based on single diode model and the Ishows a dependence on the leaky subcells, i.e., the Iis between the photo current of GaAs and that of GaInP subcells in the case of a leaky GaAs subcell, it is equal to the photo current of GaAs subcell in the case of a leaky GaInP subcell, and it is lower than the photo current of GaInP subcell when both GaAs and GaInP subcells are leaky.
DOI: 10.1016/j.mejo.2008.01.053
发表时间: 2008-10
期刊: Microelectron. J.
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