Extensive Broadband Near-Infrared Emissions from Ge(x)Si(1-x) Alloys on Micro-Hole Patterned Si(001) Substrates.
Extensive Broadband Near-Infrared Emissions from Ge(x)Si(1-x) Alloys on Micro-Hole Patterned Si(001) Substrates.
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DOI：
10.3390/nano11102545
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发表时间：
2021-09-28
期刊：
影响因子：
--
通讯作者：
Zhong Z
中科院分区：
文献类型：
--
作者：
Peng K;Zhang N;Zhang J;Chen P;Yan J;Zheng C;Jiang Z;Zhong Z
宽带近红外（NIR）发光材料一直被视为光电器件的有前途的候选者，在夜视、环境监测、生物成像等方面的广泛应用至关重要。在微孔之间的区域和微孔的侧壁分别出现谷仓状岛和树枝状纳米结构。前者是由有效应变关系驱动的。后者是由刻蚀后侧壁缺陷产生的位错引起的。在1200-2200 nm的近红外波长范围内观察到广泛的宽带光致发光（PL）光谱。此外，与平坦衬底上的参考样品相比，PL的积分强度可以增强六倍以上。这种广泛的宽和强的PL光谱归因于GeSi合金的发射和有序微孔中的引导共振模式之间的耦合以及在微孔图案化衬底上生长期间合金的应变增强分解。这些结果表明，微孔图案化Si衬底上的梯度GexSi 1 −x合金可能具有开发创新宽带NIR光电器件的巨大潜力，特别是在Si芯片上实现整个系统。
Broadband near-infrared (NIR) luminescent materials have been continuously pursued as promising candidates for optoelectronic devices crucial for wide applications in night vision, environment monitoring, biological imaging, etc. Here, graded GexSi1−x (x = 0.1–0.3) alloys are grown on micro-hole patterned Si(001) substrates. Barn-like islands and branch-like nanostructures appear at regions in-between micro-holes and the sidewalls of micro-holes, respectively. The former is driven by the efficient strain relation. The latter is induced by the dislocations originating from defects at sidewalls after etching. An extensive broadband photoluminescence (PL) spectrum is observed in the NIR wavelength range of 1200–2200 nm. Moreover, the integrated intensity of the PL can be enhanced by over six times in comparison with that from the reference sample on a flat substrate. Such an extensively broad and strong PL spectrum is attributed to the coupling between the emissions of GeSi alloys and the guided resonant modes in ordered micro-holes and the strain-enhanced decomposition of alloys during growth on the micro-hole patterned substrate. These results demonstrate that the graded GexSi1−x alloys on micro-hole pattered Si substrates may have great potential for the development of innovative broadband NIR optoelectronic devices, particularly to realize entire systems on a Si chip.
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