Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE
复制标题

GaAs衬底上MOVPE生长的ZnTe块晶和ZnTe外延层的光致发光特性

DOI:
10.1088/1674-1056/24/12/124207
复制
发表时间:
2015-10
期刊:
影响因子:
1.7
通讯作者:
Qixin Guo
Qixin Guo
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Haiyan Lv;Qi Mu;Lei Zhang;Yuanjie Lv;Ziwu Ji;Zhihong Feng;Xiangang Xu;Qixin Guo

文献摘要

参考文献

相似文献

Excitation power and temperature-dependent photoluminescence (PL) spectra of the ZnTe epilayer grown on (100) GaAs substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the GaAs substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor–acceptor pair (DAP) nor conduction band-acceptor (e–A) emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.
DOI: 10.1139/p84-043
发表时间: 1984-03
影响因子: 1.2
作者:
A. Manoogian;J. Woolley
通讯作者: A. Manoogian;J. Woolley
DOI: 10.1016/0960-8974(95)00018-6
发表时间: 1995
影响因子: 5.1
作者:
W. Kuhn;A. Lusson;B. Qu'Hen;C. Grattepain;H. Dumont;O. Gorochov;S. Bauer;K. Wolf;M. Wörz;T. Reisinger;A. Rosenauer;H. Wagner;H. Stanzl;W. Gebhardt
通讯作者: W. Kuhn;A. Lusson;B. Qu'Hen;C. Grattepain;H. Dumont;O. Gorochov;S. Bauer;K. Wolf;M. Wörz;T. Reisinger;A. Rosenauer;H. Wagner;H. Stanzl;W. Gebhardt
DOI: 10.1007/s11664-004-0049-2
发表时间: 2004-06
影响因子: 2.1
作者:
K. Yoshino;M. Yoneta;K. Ohmori;H. Saito;M. Ohishi;T. Yabe
通讯作者: K. Yoshino;M. Yoneta;K. Ohmori;H. Saito;M. Ohishi;T. Yabe
DOI: 10.1063/1.1609048
发表时间: 2003-09
影响因子: 3.2
作者:
V. Ursaki;I. Tiginyanu;V. Zalamai;S. Hubbard;D. Pavlidis
通讯作者: V. Ursaki;I. Tiginyanu;V. Zalamai;S. Hubbard;D. Pavlidis
DOI: 10.1016/j.tsf.2013.04.040
发表时间: 2013-06
期刊: Thin Solid Films
影响因子: 2.1
作者:
Lei Zhang;Z. Ji;Shulai Huang;H. Wang;Hongdi Xiao;Yujun Zheng;Xiangang Xu;Yun Lu;Q. Guo
通讯作者: Lei Zhang;Z. Ji;Shulai Huang;H. Wang;Hongdi Xiao;Yujun Zheng;Xiangang Xu;Yun Lu;Q. Guo