Improve the performance of the quantum dot sensitized ZnO nanotube solar cells with inserting ZnS-MnS composites layers
Improve the performance of the quantum dot sensitized ZnO nanotube solar cells with inserting ZnS-MnS composites layers
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插入ZnS-MnS复合层提高量子点敏化ZnO纳米管太阳能电池的性能
DOI:
10.1016/j.jallcom.2019.02.108
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发表时间:
2019-05
影响因子:
6.2
通讯作者:
Tang Yiwen
中科院分区:
文献类型:
--
作者:
Shen Wenjian;Zhang Jing;Wang Shiyu;Du Heping;Tang Yiwen
Interface passivation layer deposited onto photoanodes has been proven to be an available way to suppress charge recombination and enhance the power conversion efficiency in quantum dot-sensitized solar cells. In this work, the ZnS-MnS composites layers inserted in ZnO/CdS nanotubes photoanodes interface is firstly fabricated via ion-exchange and chemical bath deposition methods, simultaneously. By inserting the ZnS-MnS composites, electron back transfer is efficiently hindered. In addition, the uniform ZnS-MnS layer effectively blocks the direct contact between the polysulfide electrolyte and ZnO nanotubes, which inhabits the recombination of electron-hole pairs occurred at the interface. Besides, the MnS layer is in favour of the CdS quantum dots in higher load, profiting the light absorption intensity in the visible light region. Thus ZnO/ZnS-MnS/CdS nanotubes quantum dot-sensitized solar cells have efficiency of 3.62%, which is much higher than that of the solar cell with ZnS passivation layer (2.33%). This work demonstrates that constructing ZnS-MnS interface passivation layer with a proper band gap structure is a promising approach to enhance the performance of quantum dot-sensitized solar cells.
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影响因子:
4
作者:
Zang Zhigang
通讯作者:
Zang Zhigang
影响因子:
27.8
作者:
Li, Chongwen;Song, Zhaoning;Yan, Yanfa
通讯作者:
Yan, Yanfa
影响因子:
15.1
作者:
Ruirui Wang;Baosheng Li;Linfei Lai;Mingzhen Hou;Jingchang Gao;Renbing Wu
通讯作者:
Renbing Wu
影响因子:
6.2
作者:
Zhigang Zang;Xiaosheng Tang
通讯作者:
Xiaosheng Tang
影响因子:
7.2
作者:
Jiang, Jiangang;Wang, Meng;Guo, Liejin
通讯作者:
Guo, Liejin