Epitaxial transformation of hcp–fcc Ti sublattices during nitriding processes of evaporated-Ti thin films due to nitrogen-implantation
Epitaxial transformation of hcp–fcc Ti sublattices during nitriding processes of evaporated-Ti thin films due to nitrogen-implantation
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氮注入导致蒸发钛薄膜氮化过程中 hcp-fcc 钛亚晶格的外延转变
DOI:
10.1016/j.jallcom.2011.10.113
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发表时间:
2013
期刊:
影响因子:
--
通讯作者:
Y. Fujino
中科院分区:
文献类型:
--
作者:
Yu Chen;Xiaoyi Feng;Y. Kasukabe;S. Yamamoto;M. Yoshikawa;Y. Fujino
Atomistic transformation processes of Ti films due to N-implantation have been clarified through in-situ observations by using transmission electron microscope (TEM) along with molecular orbital calculations. The N2+ions with 62 keV are implanted into as-deposited Ti films which consist of hcp-Ti and TiHxwith preferred orientations, in the 400 kV analytic high resolution TEM combined with ion accelerators. Thus, titanium nitride (TiNy) films with preferred orientations are epitaxially formed by the inheritance of partial atomic arrangement of hcp-Ti or TiHxin as-deposited Ti films and by the occupation of octahedral sites by N atoms, which elucidates that epitaxial transformation of hcp–fcc Ti sublattices occurs. The analysis of electronic structure of Ti films during the implantation clarifies that octahedral sites of hcp-Ti with larger space have lower electron density, which leads to the invasion of N ions into octahedral sites. Thus, the hcp–fcc transformation is induced by the shear in the <0 1 · 0> direction on the (0 0 · 1) plane, promoted by the forming of covalent bonds mainly composed of hybridized orbitals due to combination of Ti3d and N2p orbitals, and by the weakening of Ti–Ti bonds.
DOI:
--
发表时间:
2006
期刊:
Materia Japan 45-1
影响因子:
--
作者:
K.Tanaka;Y.Komatsu;C-K.Choo;Y.Kasukabe
通讯作者:
Y.Kasukabe