Targeting molecular quantum memory with embedded error correction.

Targeting molecular quantum memory with embedded error correction.
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具有嵌入式错误校正的靶向分子量子存储器。

DOI:
10.1039/d1sc01506k
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发表时间:
2021-07-07
期刊:
影响因子:
8.4
通讯作者:
Winpenny REP
Winpenny REP
中科院分区:
化学1区
文献类型:
--
作者:
Lockyer SJ;Chiesa A;Timco GA;McInnes EJL;Bennett TS;Vitorica-Yrezebal IJ;Carretta S;Winpenny REP

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The implementation of a quantum computer requires both to protect information from environmental noise and to implement quantum operations efficiently. Achieving this by a fully fault-tolerant platform, in which quantum gates are implemented within quantum-error corrected units, poses stringent requirements on the coherence and control of such hardware. A more feasible architecture could consist of connected memories, that support error-correction by enhancing coherence, and processing units, that ensure fast manipulations. We present here a supramolecular {Cr7Ni}–Cu system which could form the elementary unit of this platform, where the electronic spin 1/2 of {Cr7Ni} provides the processor and the naturally isolated nuclear spin 3/2 of the Cu ion is used to encode a logical unit with embedded quantum error-correction. We demonstrate by realistic simulations that microwave pulses allow us to rapidly implement gates on the processor and to swap information between the processor and the quantum memory. By combining the storage into the Cu nuclear spin with quantum error correction, information can be protected for times much longer than the processor coherence. The implementation of a quantum computer requires protecting of information from noise and the ability to perform quantum gates. We present a molecular architecture providing both these ingredients, via an electronic spin 1/2 processor and a nuclear spin 3/2 memory.
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