Zn1−xMgxO (0≤x≤0.05) nanowalls grown on catalyst-free sapphire substrates by high-pressure PLD and their photoluminescence properties
Zn1−xMgxO (0≤x≤0.05) nanowalls grown on catalyst-free sapphire substrates by high-pressure PLD and their photoluminescence properties
复制标题
无催化剂蓝宝石衬底上高压PLD生长Zn1−xMgxO (0≤x≤0.05)纳米墙及其光致发光性能
DOI：
10.1007/s00339-012-7327-2
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Bingqiang Cao
中科院分区：
文献类型：
--
作者：
Peng Zhang;Ling Chen;M. Zi;Zhiwen Qiu;H. Gong;Bingqiang Cao
我们报道了Zn 1 −xMgxO（x=0，0.02，0.05at.%）的生长在没有任何金属催化剂的情况下，通过高压脉冲激光沉积（PLD）在蓝宝石衬底上沉积纳米晶。系统研究了生长压力、温度、靶基距离等实验参数对Zn 1 −xMgxO单晶生长的影响，并对生长机理进行了探讨。实验结果表明，当生长温度为950 °C，压强为400 Torr，靶基距离为2 cm时，可以在蓝宝石衬底上生长出大面积、均匀的c-取向Zn 1 −xMgxO单晶。提出了一种薄膜辅助的气固（VS）法生长Zn 1 −xMgxO单晶的方法。光致发光光谱表明，Zn 1 −xMgxO掺杂有效地扩展了禁带宽度，同时在禁带中形成了缺陷能级，这也导致了可见光发射的增强。
We report the growth of Zn1−xMgxO (x=0, 0.02, 0.05 at.%) nanowalls on sapphire substrates without any metal catalysts by a high-pressure pulsed laser deposition (PLD). The influences of the experimental parameters like growth pressure, temperature, and target-substrate distance on the growth of Zn1−xMgxO nanowalls were systemically studied and the growth mechanism was discussed. It was found that large area and uniform Zn1−xMgxO nanowalls withc-orientation can be grown on sapphire substrates when the growth temperature and pressure were 950 °C and 400 Torr at a target-substrate distance of 2 cm. A thin layer assisted vapor-solid (VS) process was proposed for Zn1−xMgxO nanowalls growth. The photoluminescence spectrum shows the bandgap of Zn1−xMgxO nanowall was effectively expanded together with defect-related levels formation in a forbidden gap, which also induced enhancement of visible emission.
影响因子：
3.3
作者：
B. Zhang;N. Binh;K. Wakatsuki;Y. Segawa;Y. Yamada;N. Usami;M. Kawasaki;H. Koinuma
通讯作者：
B. Zhang;N. Binh;K. Wakatsuki;Y. Segawa;Y. Yamada;N. Usami;M. Kawasaki;H. Koinuma