Giant Magnetoresistance in a Molecular Thin Film as an Intrinsic Property
Giant Magnetoresistance in a Molecular Thin Film as an Intrinsic Property
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分子薄膜中的巨磁阻作为一种固有特性
DOI：
10.1002/adfm.201303218
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发表时间：
2013
影响因子：
19
通讯作者：
Pilia L
中科院分区：
文献类型：
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作者：
Pilia L
研究了[Ni（quinoline-8-thiolate）2]（[Ni（qt）2]）的磁性、薄膜结构、导电性和磁电阻性能。通过沉积在叉指电极阵列上，研究了单晶和蒸发薄膜的导电和磁阻特性。观察到通过空间电荷限制传导机制解释的非线性电导率，其中电荷从电极注入。在外加磁场作用下，该材料的单晶和蒸镀薄膜在2K下均表现出大于50%的巨负磁电阻效应。在200 K时仍然可以观察到这种效应，并解释为双交换机制，其曲线形状由磁各向异性决定。在蒸发的顺磁分子薄膜中观察到的巨磁电阻（GMR）作为一种本征效应，为有机自旋电子学开辟了新的可能性。
The magnetic, thin‐film structural, conductivity, and magnetoresistance properties of [Ni(quinoline‐8‐thiolate)2] ([Ni(qt)2]) are studied. The conducting and magnetoresistance properties are studied in single crystals and in evaporated thin films through deposition on an interdigitated electrode array. Non‐linear conductivity interpreted through a space‐charge limited conduction mechanism with charges injected from the electrodes is observed. Under applied magnetic field, the material displays giant negative magnetoresistance above 50% at 2 K in both single crystals and in evaporated thin films. The effect can still be observed at 200 K and is interpreted in terms of a double exchange mechanism with the shape of the curve determined by the magnetic anisotropy. The unique observation of giant magnetoresistance (GMR) as an intrinsic effect in an evaporated thin film of paramagnetic molecules opens up new possibilities in organic spintronics.
DOI：
--
发表时间：
2007
期刊：
日本金属学会誌 71
影响因子：
--
作者：
T.Fujimoto;S.Yasuzuka;K.Yokogawa;T.Hayashi;T.Hiraoka;H.Fujiwara;T.Sugimoto;M.Hedo;Y.Uwatoko;K.Murata;S. Uji
通讯作者：
S. Uji
影响因子：
4.6
作者：
Li, GX;Sun, SH;Wang, SX
通讯作者：
Wang, SX
杂化二噻唑并噻二嗪基；
影响因子：
4.9
作者：
S. Winter;Aidin R. Balo;Ryan J. Roberts;Kristina Lekin;A. Assoud;P. Dube;R. T. Oakley
通讯作者：
R. T. Oakley