Optical emission spectroscopy of various materials irradiated by soft x-ray free-electron laser
Optical emission spectroscopy of various materials irradiated by soft x-ray free-electron laser
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软X射线自由电子激光照射下各种材料的发射光谱
DOI:
10.1117/12.822766
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发表时间:
2009
期刊:
影响因子:
--
通讯作者:
Cihelka J
中科院分区:
文献类型:
--
作者:
Cihelka J
The beam of Free-Electron Laser in Hamburg (FLASH) tuned at either 32.5 nm or 13.7 nm was focused by a grazing incidence elliptical mirror and an off-axis parabolic mirror coated by Si/Mo multilayer on 20-micron and 1-micron spot, respectively. The grazing incidence and normal incidence focusing of ~10-fs pulses carrying an energy of 10 μJ lead at the surface of various solids (Si, Al, Ti, Ta, Si3N4, BN, a-C/Si, Ni/Si, Cr/Si, Rh/Si, Ce:YAG, poly(methyl methacrylate) - PMMA, stainless steel, etc.) to an irradiance of 1013W/cm2and 1016W/cm2, respectively. The optical emission of the plasmas produced under these conditions was registered by grating (1200 lines/mm and/or 150 lines/mm) spectrometer MS257 (Oriel) equipped with iCCD head (iStar 720, Andor). Surprisingly, only lines belonging to the neutral atoms were observed at intensities around 1013W/cm2. No lines of atomic ions have been identified in UV-vis spectra emitted from the plasmas formed by the FLASH beam focused in a 20-micron spot. At intensities around 1016W/cm2, the OE spectra are again dominated by the atomic lines. However, a weak emission of Al+and Al2+was registered as well. The abundance ratio of Al/Al+should be at least 100. The plasma is really cold, an excitation temperature equivalent to 0.8 eV was found by a computer simulation of the aluminum plasma OE spectrum. A broadband emission was also registered, both from the plasmas (typical is for carbon; there were no spectral lines) and the scintillators (on Ce:YAG crystal, both the luminescence bands and the line plasma emission were recorded by the spectrometer).
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DOI:
--
发表时间:
1997
期刊:
影响因子:
--
作者:
F. Rosmej
通讯作者:
F. Rosmej
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
T. Dzelzainis;F. Khattak;B. Nagler;S. Vinko;T. Whitcher;A. Nelson;R. Lee;S. Bajt;S. Toleikis;R. Fäustlin;T. Tschentscher;L. Juha;M. Kozlová;J. Chalupský;V. Hájková;J. Krzywiński;R. Soberierski;M. Jurek;M. Fajardo;F. Rosmej;P. Heinmann;J. Wark;D. Riley
通讯作者:
D. Riley
DOI:
--
发表时间:
2001
期刊:
影响因子:
--
作者:
F. Rosmej
通讯作者:
F. Rosmej
DOI:
10.1117/12.822498
发表时间:
2009
期刊:
Acta crystallographica. Section A, Foundations and advances
影响因子:
--
作者:
S. Bajt;H. Chapman;A. Nelson;R. Lee;S. Toleikis;P. Mirkarimi;J. Alameda;S. Baker;H. Vollmer;R. Graff;A. Aquila;E. Gullikson;J. Meyer Ilse;E. Spiller;J. Krzywiński;L. Juha;J. Chalupský;V. Hájková;J. Hajdu;T. Tschentscher
通讯作者:
T. Tschentscher
影响因子:
3.8
作者:
Chalupsky, J.;Juha, L.;Zastrau, U.
通讯作者:
Zastrau, U.