Band gap engineered zinc oxide nanostructures via a sol-gel synthesis of solvent driven shape-controlled crystal growth.
Band gap engineered zinc oxide nanostructures via a sol-gel synthesis of solvent driven shape-controlled crystal growth.
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DOI：
10.1039/c9ra02091h
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发表时间：
2019-05-09
期刊：
影响因子：
3.9
通讯作者：
Rathnayake, Hemali
中科院分区：
文献类型：
--
作者：
Davis, Klinton;Yarbrough, Ryan;Froeschle, Michael;White, Jamel;Rathnayake, Hemali
提出了一种可靠的溶胶-凝胶方法，该方法结合了ZnO纳米晶体的形成和溶剂驱动的、形状控制的晶体生长过程，以在低温下形成组织良好的ZnO纳米结构。ZnO纳米晶体的溶胶显示出相对于溶剂类型的形状控制的晶体生长，从而产生纳米棒、纳米颗粒或纳米板。溶剂热过程沿着溶剂极性促进形状控制的晶体生长过程，增强了溶剂选择性粘附到晶体面上并控制纳米结构的最终形状的概念。的XRD痕迹和XPS光谱支持的概念，选择性粘附的溶剂上的晶面，导致产生不同的ZnO形态。光吸收最大值从初始前体溶液中的332 nm移动到ZnO纳米晶体溶胶的347 nm，最后移动到ZnO纳米棒的375 nm，证明了纳米晶体逐渐生长和成熟为三维纳米结构。ZnO纳米结构的工程光学带隙被发现是从3.10 eV到3.37 eV相对于在不同的溶剂系统中形成的ZnO纳米结构。从实验XRD光谱迹计算的理论带隙位于从ZnO纳米结构的UV-可见光谱获得的光学带隙的范围内。在DMF中制备的ZnO纳米棒的旋涂薄膜表现出1.14 × 10−3 S cm−1的电导率，这比在对苯二酚和ZnO溶胶中形成的ZnO纳米颗粒的电导率高出近一个数量级。利用本文提出的水基湿化学合成工艺在纳米级上工程化ZnO的带隙和电学性质的可能性是简单的、通用的和环境友好的，因此可以适用于制造具有形状控制的形貌和光电性质的其他类型的带隙工程化金属氧化物纳米结构。一个可靠的和简单的溶胶-凝胶合成，然后由溶剂驱动，形状控制，晶体生长过程中，使氧化锌纳米结构的证明。
A reliable sol–gel approach, which combines the formation of ZnO nanocrystals and a solvent driven, shape-controlled, crystal-growth process to form well-organized ZnO nanostructures at low temperature is presented. The sol of ZnO nanocrystals showed shape-controlled crystal growth with respect to the solvent type, resulting in either nanorods, nanoparticles, or nanoslates. The solvothermal process, along with the solvent polarity facilitate the shape-controlled crystal growth process, augmenting the concept of a selective adhesion of solvents onto crystal facets and controlling the final shape of the nanostructures. The XRD traces and XPS spectra support the concept of selective adhesion of solvents onto crystal facets that leads to yield different ZnO morphologies. The shift in optical absorption maxima from 332 nm in initial precursor solution, to 347 nm for ZnO nanocrystals sol, and finally to 375 nm for ZnO nanorods, evidenced the gradual growth and ripening of nanocrystals to dimensional nanostructures. The engineered optical band gaps of ZnO nanostructures are found to be ranged from 3.10 eV to 3.37 eV with respect to the ZnO nanostructures formed in different solvent systems. The theoretical band gaps computed from the experimental XRD spectral traces lie within the range of the optical band gaps obtained from UV-visible spectra of ZnO nanostructures. The spin-casted thin film of ZnO nanorods prepared in DMF exhibits the electrical conductivity of 1.14 × 10−3 S cm−1, which is nearly one order of magnitude higher than the electrical conductivity of ZnO nanoparticles formed in hydroquinone and ZnO sols. The possibility of engineering the band gap and electrical properties of ZnO at nanoscale utilizing an aqueous-based wet chemical synthesis process presented here is simple, versatile, and environmentally friendly, and thus may applicable for making other types of band-gap engineered metal oxide nanostructures with shape-controlled morphologies and optoelectrical properties. A reliable and simple sol–gel synthesis followed by a solvent-driven, shape controlled, crystal growth process to make ZnO nanostructures is demonstrated.
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DOI：
10.3390/s121217007
发表时间：
2012-12-12
期刊：
Sensors (Basel, Switzerland)
影响因子：
--
作者：
Hsiao CC;Yu SY
通讯作者：
Yu SY
影响因子：
2.5
作者：
Baruah, Sunandan;Dutta, Joydeep
通讯作者：
Dutta, Joydeep
影响因子：
9.9
作者：
Maensiri, Santi;Nuansing, Wiwat;Khemprasit, Jinda
通讯作者：
Khemprasit, Jinda
影响因子：
17.1
作者：
Dinh, Cao-Thang;Nguyen, Thanh-Dinh;Do, Trong-On
通讯作者：
Do, Trong-On
影响因子：
15
作者：
Gao, PX;Wang, ZL
通讯作者：
Wang, ZL