Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts
Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts
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金属/4H-SiC肖特基接触的势垒不均匀性和界面态
DOI：
10.7567/jjap.55.124101
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发表时间：
2016-11
期刊：
影响因子：
--
通讯作者：
Dejun Wang
中科院分区：
文献类型：
--
作者：
Lingqin Huang;Rechard Geiod;Dejun Wang
研究了Ti、Mo、Ni和Pt与4 H-SiC接触的势垒态和界面态。结果表明，所有接触的势垒高度均服从高斯分布，势垒不均匀性随接触金属类型而变化。然而，带隙中的能量平均界面态密度是金属不敏感的。当考虑高斯分布时，从电学性质中提取的界面态密度与高斯分布的4 H-SiC表面态的平均密度一致，表明金属/SiC接触处的势垒不均匀性主要来源于SiC表面态的空间变化。势垒高度和势垒不均匀性可以通过接触金属来调节，服从Cowley和Sze的势垒高度理论。
The barrier and interface states of Ti, Mo, Ni, and Pt contacts to 4H-SiC were investigated. It is found that the barrier heights for all the contacts are Gaussianly distributed and the barrier inhomogeneity varies with the contact metal type. However, the energy-averaged interface states density in the band gap is metal-insensitive. When considering Gaussian distribution, the interface states density extracted from the electrical properties is consistent with the average density of Gaussianly distributed 4H-SiC surface states, indicating that the barrier inhomogeneities at metal/SiC contacts mainly originate from the spatial variation of surface states on SiC surface. The barrier height and barrier inhomogeneity could be modulated by the contact metal, obeying the barrier height theory of Cowley and Sze.
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