Transient model with interchangeability for dual-gate ambipolar CNTFET logic design
Transient model with interchangeability for dual-gate ambipolar CNTFET logic design
复制标题
用于双栅极双极 CNTFET 逻辑设计的具有可互换性的瞬态模型
DOI：
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
J. Friedman
中科院分区：
文献类型：
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作者：
Xuan Hu;J. Friedman
随着CMOS技术达到其物理极限，需要先进的器件和电路结构来实现紧凑的电路设计。碳纳米管场效应晶体管（CNTFFET）是MOSFET的引人注目的替代品，其双极性提供了一种通过双栅极CNTFFET的更高表现力来减少器件数量的途径。然而，以前的模型不允许切换器件极性和充分利用这些属性。在本文中，我们提出了第一个模型，使双栅双极CNTFET电路中的CNTFET的极性可以在n型和p型之间切换的瞬态模拟。该模型是基于实验行为，并示出提供一个可互换的源极和漏极。该模型的实用性，然后通过级联XOR逻辑门和一位全加器，利用能力来切换的CNTFET极性的模拟和分析证明。因此，该模型能够进一步开发双极CNTFET逻辑电路，以潜在地取代CMOS。
As CMOS technologies reach their physical limits, advanced devices and circuit structures are needed to enable compact circuit design. Carbon nanotube field-effect transistors (CNTFETs) are compelling alternatives to MOSFETs, and their ambipolarity provides a route to reduce device count through higher expressive power with dual-gate CNTFETs. However, previous models do not permit switching of the device polarity and the full leveraging of these properties. In this paper, we present the first model that enables the transient simulation of dual-gate ambipolar CNTFET circuits in which the CNTFET polarities can be switched between n- and p-type. This model is based on experimental behavior and is shown to provide an interchangeable source and drain. The utility of the model is then demonstrated through the simulation and analysis of cascaded XOR logic gates and a one-bit full adder that utilize the ability to switch the CNTFET polarity. This model therefore enables the further development of ambipolar CNTFET logic circuits towards their potential replacement of CMOS.
影响因子：
4.6
作者：
Resta GV;Agarwal T;Lin D;Radu IP;Catthoor F;Gaillardon PE;De Micheli G
通讯作者：
De Micheli G
影响因子：
4.9
作者：
Trommer, Jens;Heinzig, Andre;Weber, Walter Michael
通讯作者：
Weber, Walter Michael