The ATLAS planar pixel sensor R&D project
The ATLAS planar pixel sensor R&D project
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ATLAS 平面像素传感器 R
DOI：
10.1109/nssmic.2009.5402434
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
D. Muenstermann
中科院分区：
文献类型：
--
作者：
M. Beimforde;D. Muenstermann
在ATLAS内部探测器升级的平面像素传感器技术研发项目中，研究了平面像素传感器在最高通量和大面积硅探测器中的使用。主要的研究目标是优化辐照后的信号大小，减少非活性传感器的边缘，调整读出电子设备的辐射引起的信号大小的减少，并降低生产成本。用中子和质子分别对平面n-in-p传感器进行了2 · 1016 neq/cm ~ 2和1 · 1016 neq/cm ~ 2注量的辐照，研究了收集电荷与辐照剂量的关系。此外，还将对辐照过的标准300 μm和薄140 μm传感器进行比较，结果表明，薄传感器辐照后信号大小增加。本发明的ATLAS前端电子器件的调谐研究示出了将本发明的FE-I3读出芯片的阈值降低到小于1500个电子的可能性，这允许达到低于3000个电子的及时阈值。在本像素检测器升级场景中，用于最内层的平坦板条设计需要减少传感器边缘处的无效区域以确保低几何低效。本文介绍的实现窄边的研究显示了将非有源区的宽度减小到500μm以下的可能性。此外，本文还简要概述了平面像素研发项目中目前的模拟活动。
Within the R&D project on Planar Pixel Sensor Technology for the ATLAS inner detector upgrade, the use of planar pixel sensors for highest fluences as well as large area silicon detectors is investigated. The main research goals are optimizing the signal size after irradiations, reducing the inactive sensor edges, adjusting the readout electronics to the radiation induced decrease of the signal sizes, and reducing the production costs. Planar n-in-p sensors have been irradiated with neutrons and protons up to fluences of 2 · 1016 neq/cm2 and 1 · 1016 neq/cm2 respectively to study the collected charge as a function of the irradiation dose received. Furthermore comparisons of irradiated standard 300 μm and thin 140 μm sensors will be presented showing an increase of signal sizes after irradiation in thin sensors. Tuning studies of the present ATLAS front end electronics show possibilities to decrease the discriminator threshold of the present FE-I3 read out chips to less than 1500 electrons which allows to reach an in-time threshold of below 3000 electrons. In the present pixel detector upgrade scenarios a flat stave design for the innermost layers requires reduced inactive areas at the sensor edges to ensure low geometric inefficiencies. Investigations towards achieving slim edges presented here show possibilities to reduce the width of the inactive area to less than 500μm Furthermore, a brief overview of present simulation activities within the Planar Pixel R&D project is given.
具有不同电极配置的 3D 有源边缘硅传感器：辐射硬度和噪声性能
DOI：
10.1016/j.nima.2009.03.049
发表时间：
2009
期刊：
Accelerators, Spectrometers, Detectors and Associated Equipment
影响因子：
--
作者：
Da Viá C
通讯作者：
Da Viá C