3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance
3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance
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具有不同电极配置的 3D 有源边缘硅传感器：辐射硬度和噪声性能
DOI：
10.1016/j.nima.2009.03.049
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Da Viá C
中科院分区：
文献类型：
--
作者：
Da Viá C
在美国加州斯坦福纳米制造工厂（Stanford Nano Fabrication Facility， SNF）制作了不同电极结构的三维探测器，其电极贯穿整个硅片和活动边缘。在中子照射到8.8×1015neqcm−2后，使用红外激光对它们进行了表征，该红外激光可以注入最小电离粒子~ 2，对于电极间距最短（56μm）的配置，信号效率高达66%。来自同一晶圆的传感器也被撞接到ATLAS FE-I3像素读出芯片上，并对其噪声进行了表征。当衬底厚度为210μm时，辐照前后最可能的信噪比达到38:1。这些设备在大型强子对撞机上的应用前景很好，如ATLAS和CMS的非常前沿探测器，ATLAS b层替换和一般像素升级。此外，3D传感器可以在需要高速、高分辨率探测器的应用中发挥作用，例如欧洲核子研究中心（CERN）提出的紧凑型线性对撞机（CLIC）的顶点定位器。
3D detectors, with electrodes penetrating the entire silicon wafer and active edges, were fabricated at the Stanford Nano Fabrication Facility (SNF), California, USA, with different electrode configurations. After irradiation with neutrons up to a fluence of 8.8×1015neqcm−2, they were characterised using an infrared laser tuned to inject ∼2 minimum ionising particles showing signal efficiencies as high as 66% for the configuration with the shortest (56μm) inter-electrode spacing. Sensors from the same wafer were also bump-bonded to the ATLAS FE-I3 pixel readout chip and their noise characterised. Most probable signal-to-noise ratios were calculated before and after irradiation to be as good as 38:1 after the highest irradiation level with a substrate thickness of 210μm. These devices are promising candidates for application at the LHC such as the very forward detectors at ATLAS and CMS, the ATLAS B-Layer replacement and the general pixel upgrade. Moreover, 3D sensors could play a role in applications where high speed, high-resolution detectors are required, such as the vertex locators at the proposed Compact Linear Collider (CLIC) at CERN.
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