High Temperature Data Converters in Silicon Carbide CMOS
High Temperature Data Converters in Silicon Carbide CMOS
复制标题
碳化硅 CMOS 高温数据转换器
DOI：
10.1109/ted.2017.2665520
复制
发表时间：
2017
影响因子：
3.1
通讯作者：
J. Holmes
中科院分区：
文献类型：
--
作者：
Ashfaqur Rahman;L. Caley;Sajib Roy;Nathan Kuhns;A. Mantooth;J. Di;A. Francis;J. Holmes
本文提出了一种适用于高温应用的8-B位数模转换器（DAC）和8-B位模数转换器（ADC）。这对数据转换器采用1.2-<inline-formula><tex-math notation="LaTeX">$\mu \text{m}$</tex-math></inline-formula>碳化硅CMOS工艺设计，并在25 °C至400 °C温度范围内进行了测试。400 °C时，DAC的最大差分非线性（DNL）和积分非线性（INL）误差分别为1.2 LSB和2.7 LSB，失调和增益误差分别为5.9 LSB和2.7 LSB。ADC的最大DNL和INL误差分别为3.6和−3 LSB，失调误差为−7 LSB，增益误差为2.6 LSB。该ADC在300 °C时的SNDR = 32.15 dB，有效位数= 5.05 B。DAC是同类产品中第一款采用碳化硅CMOS的器件，而ADC则是第一款在超过300 °C的温度下工作的器件。
This paper presents an 8-b digital to analog converter (DAC) and 8-b analog to digital converter (ADC) for high-temperature applications. The pair of data converters were designed in a 1.2-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> silicon carbide CMOS process and have been tested from 25 °C to 400 °C. At 400 °C, the DAC has a maximum differential nonlinearity (DNL) and integral nonlinearity (INL) error of 1.2 least significant bit (LSB) and 2.7 LSB, respectively, while the offset and the gain error are 5.9 and 2.7 LSB. The ADC has a maximum DNL and INL error of 3.6 and −3 LSB, respectively, while the offset error is −7 LSB and the gain error is 2.6 LSB. The ADC has an SNDR = 32.15 dB and effective number of bits = 5.05 b at 300 °C. The DAC is the first of its kind in silicon carbide CMOS, while the ADC is the first reported at temperatures over 300 °C.
使用集成硅单孔晶体管的电流开关电路的室温操作
DOI：
--
发表时间：
2004
期刊：
Japanese Journal of Applied Physics Vol.44, No.11
影响因子：
--
作者：
Masumi Saitoh;Hidehiro Harata;Toshihiro Hiramoto
通讯作者：
Toshihiro Hiramoto