Persistent optical phenomena in oxide semiconductors
Persistent optical phenomena in oxide semiconductors
复制标题
氧化物半导体中的持久光学现象
DOI:
10.1117/12.2648437
复制
发表时间:
2023
期刊:
影响因子:
--
通讯作者:
McCloy, John S.
中科院分区:
文献类型:
--
作者:
McCluskey, Matthew D.;Pansegrau, Christopher;Ahmed, Syeed E.;Santillan, Macarena;Jesenovec, Jani;McCloy, John S.
The interaction of transparent oxide semiconductors with light is critically important for a range of applications. Persistent effects could be exploited for holographic memory or optically defined circuits. Conversely, they may also be detrimental to device operation. Large, room-temperature persistent photoconductivity (PPC) was discovered in strontium titanate (SrTiO3, STO) after annealing in a hydrogen-containing atmosphere. Barium titanate (BaTiO3, BTO), a ferroelectric material, was recently found to also exhibit PPC. Room-temperature photodarkening was observed in Cu-doped gallium oxide (β-Ga2O3) after exposure to sub-bandgap light. Hydrogen is believed to play a central role in these persistent phenomena. In the proposed model, a photon excites substitutional hydrogen (a proton inside an oxygen vacancy), making the defect unstable. The proton leaves and binds to a host oxygen atom, forming an O-H bond that is observed with infrared spectroscopy. An oxygen vacancy is left behind. Because oxygen vacancies in STO and BTO are shallow donors, this process results in PPC. In β-Ga2O3:Cu, however, the oxygen vacancy neighbors a Cu acceptor. In that case, photoexcitation results in the rare Cu3+state, which absorbs visible light. The effect can be “erased” by annealing at 300-400°C.
登录
查看更多内容
影响因子:
3.7
作者:
Choi, Minseok;Oba, Fumiyasu;Tanaka, Isao
通讯作者:
Tanaka, Isao
影响因子:
8.6
作者:
J. Jesenovec;C. Pansegrau;M. McCluskey;J. McCloy;T. Gustafson;L. Halliburton;J. Varley
通讯作者:
J. Varley
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
J. Varley;A. Janotti;C. Walle
通讯作者:
C. Walle
影响因子:
2.1
作者:
Ahmed, Syeed E.;Poole, Violet M.;McCluskey, Matthew D.
通讯作者:
McCluskey, Matthew D.
影响因子:
3.2
作者:
Pansegrau, Christopher;McCluskey, Matthew D.
通讯作者:
McCluskey, Matthew D.