Influence of oxygen on the parameters of a thin film copper phthalocyanine field effect transistor
Influence of oxygen on the parameters of a thin film copper phthalocyanine field effect transistor
复制标题
氧对薄膜铜酞菁场效应晶体管参数的影响
DOI：
10.1002/1099-0712(199909/10)9:5
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
F. Schauer
中科院分区：
文献类型：
--
作者：
I. Zhivkov;S. Nespurek;F. Schauer
利用温度调制场效应谱研究了氧对酞菁铜薄膜场效应晶体管电参数的影响。结果发现，在氧暴露后，暗电导率和阈值电压的源漏电流与栅电压的依赖性改变。这两种效应都可以有效地用于气体传感。版权所有© 1999年约翰威利父子有限公司。
The influence of oxygen on the electrical parameters of a copper phthalocyanine thin film field effect transistor was investigated by means of temperature-modulated field effect spectroscopy. It was found that both the dark electrical conductivity and threshold voltage of the source–drain current versus gate voltage dependence were changed after oxygen exposure. Both effects can be effectively utilised for gas sensing. Copyright © 1999 John Wiley & Sons, Ltd.
影响因子：
29.4
作者：
Horowitz, G
通讯作者：
Horowitz, G