Modulation of specific heat in graphene by uniaxial strain
Modulation of specific heat in graphene by uniaxial strain
复制标题
单轴应变调节石墨烯中的比热
DOI：
10.1140/epjb/e2011-20728-2
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发表时间：
2011-11
影响因子：
1.6
通讯作者：
Xia MG, Zhang SL
中科院分区：
文献类型：
--
作者：
Xia MG, Zhang SL
本文研究了单轴应变石墨烯的比热。单轴应变可以根据应变的量和方向调节比热。比热在低温下随着拉伸应变量的增加而减小，并且随着压缩而增加。在 110 K 以上，它随着应变量与低温下的相反而变化。这些新颖的特性可归因于面外声子的应变引起的位移行为，这与其他声子的行为不同。当应变从锯齿形转向扶手椅方向时，给定温度下的比热逐渐降低。然而，比热随应变方向的变化明显小于随应变量的变化。此外，不同应变方向之间的比热差异随着温度的升高而减小。这种可调的比热可能为热记忆的实现和石墨烯纳米电子器件的热管理提供新途径。
The specific heat of uniaxially strained graphene was investigated in the present paper. A uniaxial strain can modulate specific heat depending on the amount and direction of the strain. Specific heat decreases with an increase in the amount of tension strain at a low temperature and increases with compression. Above 110 K, it varies as the amount of strain is reversed to that at a low temperature. These novel properties can be attributed to the strain-induced shift behavior of out-of-plane acoustic phonons, which is different from that of other phonons. When the strain shifts from zigzag to armchair direction, specific heat gradually decreases for a given temperature. However, the variation in specific heat with the strain direction is significantly less than that with the amount of strain. Further, the difference in specific heat between different strain directions decreases with an increase in temperature. This tunable specific heat may provide a new route for both the implementation of thermal memory and the thermal management of graphene nanoelectronic devices.
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