Double-Sided, Double-Type-Column 3-D Detectors: Design, Fabrication, and Technology Evaluation
Double-Sided, Double-Type-Column 3-D Detectors: Design, Fabrication, and Technology Evaluation
复制标题
双面双柱 3D 探测器：设计、制造和技术评估
DOI：
10.1109/tns.2008.2002885
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发表时间：
2008
影响因子：
1.8
通讯作者：
N. Zorzi
中科院分区：
文献类型：
--
作者：
A. Zoboli;M. Boscardin;L. Bosisio;G. Betta;C. Piemonte;S. Ronchin;N. Zorzi
我们报告了意大利特伦托的Fondazione Bruno Kessler(前身为ITC-IRST)开发3D硅辐射探测器的最新结果。基于从以前的器件(3-D单型柱)获得的结果，定义了一个新的探测器概念，即3-D-DDTC(双面双型柱)，它包括两种掺杂类型的柱状电极，从交替的晶片侧面蚀刻，停止与相反表面的短距离(D)。模拟证明，如果d相对于晶片厚度保持较小，该方法可以产生与标准3-D探测器相当的电荷收集特性，并且具有制造工艺更简单的优点。参照该技术设计了两个晶片布局，并进行了两次制造。本文报告了工艺和设计方面的内容，以及模拟结果和属于第一批3-D-DDTC的探测器和测试结构的初步表征结果。
We report on the latest results from the development of 3-D silicon radiation detectors at Fondazione Bruno Kessler of Trento (FBK), Italy (formerly ITC-IRST). Building on the results obtained from previous devices (3-D Single-Type-Column), a new detector concept has been defined, namely 3-D-DDTC (Double-sided Double-Type Column), which involves columnar electrodes of both doping types, etched from alternate wafer sides, stopping a short distance (d) from the opposite surface. Simulations prove that, if d is kept small with respect to the wafer thickness, this approach can yield charge collection properties comparable to those of standard 3-D detectors, with the advantage of a simpler fabrication process. Two wafer layouts have been designed with reference to this technology, and two fabrication runs have been performed. Technological and design aspects are reported in this paper, along with simulation results and initial results from the characterization of detectors and test structures belonging to the first 3-D-DDTC batch.
具有不同电极配置的 3D 有源边缘硅传感器：辐射硬度和噪声性能
DOI：
10.1016/j.nima.2009.03.049
发表时间：
2009
期刊：
Accelerators, Spectrometers, Detectors and Associated Equipment
影响因子：
--
作者：
Da Viá C
通讯作者：
Da Viá C