Enhanced efficiency of Cu(2)ZnSn(S,Se)(4) solar cells via anti-reflectance properties and surface passivation by atomic layer deposited aluminum oxide.
Enhanced efficiency of Cu(2)ZnSn(S,Se)(4) solar cells via anti-reflectance properties and surface passivation by atomic layer deposited aluminum oxide.
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通过原子层沉积氧化铝的抗反射特性和表面钝化提高 Cu2ZnSn(S,Se)(4) 太阳能电池的效率
DOI：
10.1039/c8ra03437k
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发表时间：
2018-05-22
期刊：
影响因子：
3.9
通讯作者：
Yao, Bin
中科院分区：
文献类型：
--
作者：
Zhang, Bingye;Han, Lu;Ying, Shitian;Li, Yongfeng;Yao, Bin
降低界面复合损耗是研制Cu2ZnSn4(S，Se)4(CZTSSe)太阳电池的主要挑战之一。在这里，我们提出了一种CZTSSe太阳电池，它具有原子层沉积的Al_2O_3薄膜用于表面钝化。系统研究了钝化层厚度对太阳电池功率转换效率(PCE)、短路电流密度(JSC)、开路电压(VOC)和填充因子(FF)的影响。研究发现，Al_2O_3薄膜对CZTSSe太阳电池具有显著的减反射性能。随着Al_2O_3厚度的增加(1-10 nm)，CZTSSe薄膜的平均反射率从12.9%下降到9.6%，而不含Al_2O_3的CZTSSe薄膜的平均反射率为13.6%。Al_2O_3钝化层也有助于抑制表面复合和增强载流子分离。Al_2O_3薄膜的钝化性能与化学钝化和场效应钝化有关，钝化是由于Al-OH键释放H原子以及Al空位和O间隙的形成所致。因此，添加2 nm-Al_2O_3的CZTSSe太阳电池的JSC和VOC分别比未钝化的样品提高了37.8%和57.8%。得到的CZTSSe太阳电池的伏安、电流密度和η分别为0.361 V、33.78 mA和5.66%。结果表明，Al_2O_3薄膜在光伏应用中表现出AR和表面钝化的双重功能。采用AlD-Al_2O_3作为CZTSSe器件的钝化层，通过精确控制Al_2O_3的厚度，获得了最佳的器件参数。
Reducing interface recombination losses is one of the major challenges in developing Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Here, we propose a CZTSSe solar cell with an atomic layer deposited Al2O3 thin film for surface passivation. The influence of passivation layer thickness on the power conversion efficiency (PCE), short-circuit current density (Jsc), open-circuit voltage (Voc) and fill factor (FF) of the solar cell is systematically investigated. It is found that the Al2O3 film presents notable antireflection (AR) properties over a broad range of wavelengths (350–1000 nm) for CZTSSe solar cells. With increasing Al2O3 thickness (1–10 nm), the average reflectance of the CZTSSe film decreases from 12.9% to 9.6%, compared with the average reflectance of 13.6% for the CZTSSe film without Al2O3. The Al2O3 passivation layer also contributes to suppressed surface recombination and enhanced carrier separation. Passivation performance is related to chemical and field effect passivation, which is due to released H atoms from the Al–OH bonds and the formation of Al vacancies and O interstitials within Al2O3 films. Therefore, the Jsc and Voc of the CZTSSe solar cell with 2 nm-Al2O3 were increased by 37.8% and 57.8%, respectively, in comparison with those of the unpassivated sample. An optimal CZTSSe solar cell was obtained with a Voc, Jsc and η of 0.361 V, 33.78 mA and 5.66%. Our results indicate that Al2O3 films show the dual functions of AR and surface passivation for photovoltaic applications. ALD-Al2O3 is used as a passivation layer in a CZTSSe device and optimal device parameters are obtained by precisely controlling Al2O3 thickness.
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影响因子：
2.1
作者：
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通讯作者：
Powalla, M
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影响因子：
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影响因子：
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作者：
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影响因子：
6.9
作者：
Sozzi, Giovanna;Di Napoli, Simone;Tiwari, Ayodhya N.
通讯作者：
Tiwari, Ayodhya N.