A new probe into thin copper sulfide counter electrode with thickness below 100 nm for quantum dot-sensitized solar cells
A new probe into thin copper sulfide counter electrode with thickness below 100 nm for quantum dot-sensitized solar cells
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量子点敏化太阳能电池厚度低于100 nm的薄硫化铜对电极的新探索
DOI：
10.1016/j.electacta.2016.04.047
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发表时间：
2016-07
影响因子：
6.6
通讯作者：
Jun Zhu
中科院分区：
文献类型：
--
作者：
Weiwei Dong;Xiaodong Fang;Linhua Hu;Jun Zhu
目前，用于量子点敏化太阳能电池（QDSSCs）的cu对电极（CEs）大多具有数百纳米甚至几微米的厚度。考虑到低厚度CE具有诸多优点，本文采用不同镀液浓度的化学浴沉积（CBD）法制备了厚度在47 ~ 115 nm之间的cu薄膜。采用厚度仅为64 nm的cu薄膜作为QDSSCs，在没有进行结构优化的情况下，功率转换效率（PCE）达到3.25%，高于厚度为2.8 μm的cu CE电池。采用电化学阻抗谱、Tafel极化和两点电流电压测量等方法研究了不同厚度cu - ce的电催化和导电性能。由于64 nm厚的cu CE具有最高的电催化能力和良好的导电性，用该CE组装的QDSSC在一次太阳光照（100 mW cm - 2, AM 1.5）下达到了相对较高的PCE。此外，循环伏安法测量表明，薄cu CE对多硫化物电解质具有良好的稳定性。
Currently, most of CuS counter electrodes (CEs) used in quantum dot-sensitized solar cells (QDSSCs) are provided with a thickness of hundreds of nanometers or even several microns. Considering the CE with low thickness having many advantages, thin CuS films with thickness ranging from 47 nm below to 115 nm have been synthetized in this paper via chemical bath deposition (CBD) method with different bath concentrations. A power conversion efficiency (PCE) of 3.25% has been achieved utilizing CuS thin films a thickness of only 64 nm as CEs in QDSSCs without any structural optimization, which is higher than the value of the cell employing CuS CE with thickness of 2.8 μm. Electrochemical impedance spectroscopy, Tafel polarization, and two-point current-voltage measurements are used to investigate the electrocatalytic and conductive performance of CuS CEs with different thickness. Owing to the highest electrocatalytic capacity and good conductivity of the 64 nm-thick CuS CE, QDSSC assembled with this CE has reached relatively high PCE under one sun illumination (100 mW cm−2, AM 1.5). In addition, cyclic voltammetry measurements indicate that the thin CuS CE has a good stability against the polysulfide electrolyte.
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