Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 °C.
Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 °C.
复制标题
在轴上 Si (001) 上生长的超高热稳定性 InAs/GaAs 量子点激光器，具有创纪录的 150 °C 连续波工作温度。
DOI：
10.1364/oe.494251
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发表时间：
2023
期刊：
影响因子：
3.8
通讯作者：
T. Yang
中科院分区：
文献类型：
--
作者：
Zunren Lv;Shuai Wang;Shengli Wang;Hongyu Chai;L. Meng;Xiaoguang Yang;T. Yang
在硅光子芯片上直接外延生长具有优异热性能的III-V族光源有望实现低成本、低功耗、高性能的光子集成电路。在这里，我们报告了直接生长在同轴Si（001）上的超高热稳定性1.3 µ m InAs/GaAs量子点（QD）激光器的实现，其连续波（CW）工作温度达到创纪录的150 ° C。 采用优化的三步分子束外延生长方法，首次制备了具有4.3 × 106cm-2低穿透位错密度（TDD）的GaAs缓冲层。 然后，随后在低TDD Si基GaAs缓冲层上生长具有p型调制掺杂的八层QD激光器结构，以提高器件的温度稳定性。结果表明，该量子点激光器在10 - 75 ° C和10 - 140 ° C的宽温度范围内具有超高温稳定性，其特征温度T0 = ∞，T1 = ∞。此外，QD激光器的最高CW工作温度高达150 ° C，脉冲工作温度高达160 ° C。此外，QD激光器在85 ° C和125 ° C下分别显示出50 mW和19 mW的高CW饱和功率。
Direct epitaxial growth of group III-V light sources with excellently thermal performance on silicon photonics chips promises low-cost, low-power-consumption, high-performance photonic integrated circuits. Here, we report on the achievement of ultra-high thermal stability 1.3 µm InAs/GaAs quantum dot (QD) lasers directly grown on an on-axis Si (001) with a record-high continuous-wave (CW) operating temperature of 150 °C. A GaAs buffer layer with a low threading dislocation density (TDD) of 4.3 × 106 cm-2 was first deposited using an optimized three-step growth method by molecular beam epitaxy. Then, an eight-layer QD laser structure with p-type modulation doping to enhance the temperature stability of the device was subsequently grown on the low TDD Si-based GaAs buffer layer. It is shown that the QD laser exhibits the ultra-high temperature stability with a characteristic temperature T0=∞ and T1=∞ in the wide temperature range of 10-75 °C and 10-140 °C, respectively. Moreover, a maximum CW operating temperature of up to 150 °C and a pulsed operating temperature of up to 160 °C are achieved for the QD laser. In addition, the QD laser shows a high CW saturation power of 50 mW at 85 °C and 19 mW at 125 °C, respectively.
影响因子：
4
作者：
Jung, Daehwan;Norman, Justin;Bowers, John E.
通讯作者：
Bowers, John E.