Source of nitrogen atoms of amorphous carbon nitride films fabricated with microwave-plasma CVD processes:-猫眼课题宝

采用微波等离子体CVD工艺制备的非晶氮化碳薄膜的氮原子来源：

DOI：

10.14723/tmrsj.38.31

发表时间：

2013

期刊：

Transactions-Materials Research Society of Japan

影响因子：

通讯作者：

中科院分区：

文献类型：

作者：

Haruhiko Ito;A. Yamamoto;Tsuneo Suzuki;H. Saitoh

A novel method was presented to analyze the contribution of CN radicals to the N source of hydrogenated amorphous carbon nitride films based on the ratio of the fluxes, s=a-CN/CN, where a-CN is the flux of N atoms deposited and CN is that of CN radicals. Films were formed by the microwave discharge of C6H6 vapor diluted with N2. CN was evaluated from the density of CN radicals determined from the intensity analysis of the laser-induced fluorescence spectra of the CN(AiX) transition and the flow speed by a time-resolved emission measurement. a-CN was evaluated from the mass of a deposited film calibrated against the atomic compositions determined from the combination of Rutherford backscattering and elastic recoil detection measurements. From the comparison of the present s values and the sticking probability of CN radicals determined in our previous study [Spectrochimica Acta PartA: Molecular and Biomolecular Spectroscopy, 86, 256-265 (2012)], CN radicals were found to be the origin of 30-50% of N atoms of films fabricated in the present reaction system.