180-GHz Gain-Bandwidth Product Back-Side-Illuminated GaInAs–AlInAs APDs
180-GHz Gain-Bandwidth Product Back-Side-Illuminated GaInAs–AlInAs APDs
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180GHz 增益带宽产品背照式 GaInAs–AlInAs APD
DOI：
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发表时间：
2009
影响因子：
2.6
通讯作者：
M. Achouche
中科院分区：
文献类型：
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作者：
A. Rouvié;D. Carpentier;J. Decobert;N. Lagay;F. Pommereau;M. Achouche
本文介绍了不同吸收层厚度的GaInAs-AlInAs雪崩光电二极管的比较研究。通过暗电流和频率响应仿真研究了垂直结构对功能特性的影响。制备的器件实现了高达180 GHz的增益带宽积GtimesB，同时具有极低的暗电流和低的过量噪声因数。
This letter presents a comparative study of GaInAs-AlInAs avalanche photodiodes with different absorption layer thicknesses. Simulations concerning dark current and frequency response have been carried out to study the influence of the vertical structure on functional characteristics. Fabricated devices achieved gain-bandwidth product GtimesB as high as 180 GHz combined with very low dark current and low excess noise factor.
影响因子：
2.5
作者：
Goh, Y. L.;Marshall, A. R. J.;Pinches, S. M.
通讯作者：
Pinches, S. M.