Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs
Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs
复制标题
基于电荷的交错多指 OTFT 电容紧凑建模
DOI：
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发表时间：
2020
影响因子：
2.3
通讯作者：
A. Kloes
中科院分区：
文献类型：
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作者：
Jakob Leise;Jakob Pruefer;G. Darbandy;Masoud Seifaei;Y. Manoli;H. Klauk;U. Zschieschang;B. Iñíguez;A. Kloes
本文介绍了一种基于电荷的交错有机薄膜晶体管（OTFTs）电荷和电容计算方法。基于已经存在的直流模型，电荷以解析和紧凑的形式产生。采用线性电荷分配方案将电荷分配到通道的漏极/源极。最后的方程只依赖于几何参数和通道漏极/源极的电荷密度。此外，还考虑了制造器件中的边缘区域。在Verilog-A中实现了紧凑的模型，并与Sentaurus TCAD仿真结果和测量数据进行了比较。此外，还将差分放大器的仿真结果与测量结果进行了比较。该模型的优点是其独特的公式涵盖了所有的操作制度。
This journal paper introduces a charge-based approach for the calculation of charges and capacitances in staggered organic thin-film transistors (OTFTs). Based on an already existing DC model, the charges are yielded in an analytical and compact form. A linear charge partitioning scheme is applied to ascribe charges to the drain/source side of the channel. The final equation is only dependent on geometrical parameters and the charge densities at the drain/source end of the channel. Furthermore, the fringing regions in fabricated devices are taken into account. The compact model is implemented in Verilog-A and the capacitances are compared to Sentaurus TCAD simulation results as well as measurement data. Additionally, simulation results for a differential amplifier are compared to measurements. The advantage of this model is its unique formulation covering all operation regimes.
有机薄膜晶体管电容紧凑模型的数值分析
影响因子：
3.2
作者：
S. Scheinert;T. Zaki;R. Rödel;I. Hörselmann;H. Klauk;J. N. Burghartz
通讯作者：
J. N. Burghartz