Development of Long-Length BMO-Doped REBCO Coated Conductors by Hot-Wall PLD Process
Development of Long-Length BMO-Doped REBCO Coated Conductors by Hot-Wall PLD Process
复制标题
通过热壁 PLD 工艺开发长长度 BMO 掺杂 REBCO 涂层导体
DOI：
10.1109/tasc.2018.2791805
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发表时间：
2018
影响因子：
1.8
通讯作者：
S. Awaji
中科院分区：
文献类型：
--
作者：
S. Fujita;S. Muto;W. Hirata;Y. Adachi;T. Yoshida;M. Igarashi;K. Kakimoto;Y. Iijima;K. Naoe;T. Kiss;T. Okada;S. Awaji
日本千叶藤仓株式会社利用大面积离子束辅助沉积(IBAD)和热壁式脉冲激光沉积(PLD)开发了稳定、高通量的REBCO涂层导体(CC)生产技术。最近，我们一直在尝试将BaMo3(BMO，M：ZR或Hf)掺杂到REBCO层以提高场临界电流密度(JC)。在优化IBAD模板上BaHfO_3掺杂EuBCO薄膜PLD沉积条件的过程中，发现了“高Jc条件”和“高生长速率条件”。对于在此条件下制备的样品，研究了Ic的磁场角度依赖关系和REBCO的厚度依赖关系。最后，我们在高生长速率条件下成功地制备出了长达300m、冰点分布均匀的连铸体。用磁化法估算的77K时的纵向不均匀性(定义为标准偏差除以平均值)为2.6%，与未掺杂的导体相当。在30K，2T时，两个终点的场内传输IC值分别为1756和1786 A/cm。
Fujikura Ltd., Chiba, Japan, has developed stable and high-throughput production techniques for REBCO coated conductors (CC) by using large-area ion-beam-assisted-deposition (IBAD), and hot-wall type pulsed-laser-deposition (PLD). Recently, we have been attempting to dope BaMO3(BMO, M: Zr or Hf) to REBCO layer in order to enhance in-field critical current density (Jc). In the course of optimizing deposition conditions of PLD for BaHfO3doped EuBCO films on IBAD templates, “high Jccondition” and “high growth rate condition” were found. For samples prepared under these conditions, the magnetic field angle dependence of Icand REBCO thickness dependence were investigated. Finally, we succeeded in fabricating a 300-m-long CC with uniform Icdistribution at the high-growth-rate condition. The longitudinal Ichomogeneity (defined as standard deviation divided by average) at 77 K evaluated by magnetization method was 2.6%, which is comparable to nondoped conductors. Transport in-field Icfor the both end points were 1756 and 1786 A/cm at 30 K, 2 T, respectively.
热壁 PLD 制备 BMO 掺杂 REBCO 涂层导体的应变特性
DOI：
10.1088/1742-6596/871/1/012042
发表时间：
2017
期刊：
Journal of Physics: Conference Series
影响因子：
--
作者：
S. Fujita;S. Muto;T. Yoshida;H. Sato;M. Igarashi;K. Kakimoto;Y. Iijima;K. Naoe
通讯作者：
K. Naoe
DOI：
10.1016/j.physc.2014.03.013
发表时间：
2014-09-15
影响因子：
1.7
作者：
Yoshida, T.;Ibi, A.;Shiohara, Y.
通讯作者：
Shiohara, Y.