On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si
On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si
复制标题
氮化物和硅器件的晶圆上集成：将极化能力引入硅
DOI：
10.1109/mwsym.2009.5165897
复制
发表时间：
2009
期刊：
影响因子：
--
通讯作者：
T. Palacios
中科院分区：
文献类型：
--
作者：
Jinwook Chung;B. Lu;T. Palacios
AlGaN/GaN晶体管和Si CMOS电子器件在同一芯片上的无缝集成将彻底改变数字和混合信号电子器件。在这个演讲中，我们描述了我们小组在展示这种集成方面所做的努力。近年来，Si-GaN-Si虚拟衬底已经通过衬底去除和晶片键合工艺制造。氮化物的非常高的热稳定性允许在这些衬底上制造Si CMOS电子器件，而不会降低嵌入的氮化物层的性能。此外，首次在这些衬底上制备了Si（001）上的GaN晶体管。这种集成支持的许多新电路和器件包括高功率模数转换器、高速差分放大器、常关型功率晶体管和高度紧凑的电源调节器电路。
The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. Si-GaN-Si virtual substrates have been recently fabricated through substrate removal and wafer bonding processes. The very high thermal stability of nitrides allows for the fabrication of Si CMOS electronics on these substrates without degrading the performance of the embedded nitride layer. In addition, GaN transistors on Si (001) have been fabricated on these substrates for the first time. Some of the many new circuits and devices that this integration allows include high power analog-to-digital converters, high speed differential amplifiers, normally-off power transistors, and highly-compact power regulator circuits.
影响因子：
20.6
作者：
Mishra, Umesh K.;Shen, Likun;Wu, Yi-Feng
通讯作者：
Wu, Yi-Feng