Hydrogenated-amorphous carbon nitride films formed from the dissociative excitation reaction of CH3CN with the microwave-discharge flow of Ar: Correlation of the [N]/([N]+[C]) ratio with the relative number densities of the CH(A2Δ) and CN(B2Σ+) states
Hydrogenated-amorphous carbon nitride films formed from the dissociative excitation reaction of CH3CN with the microwave-discharge flow of Ar: Correlation of the [N]/([N]+[C]) ratio with the relative number densities of the CH(A2Δ) and CN(B2Σ+) states
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由 CH3CN 与微波放电流 Ar 的解离激发反应形成的氢化非晶氮化碳薄膜：[N]/([N]+[C]) 比率与 CH(A2Δ) 相对数密度的相关性) 和 CN(B2Σ+) 状态
DOI：
10.1116/1.1690250
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
K. Yatsui
中科院分区：
文献类型：
--
作者：
Haruhiko Ito;H. Miki;K. Namiki;N. Ito;H. Saitoh;Tsuneo Suzuki;K. Yatsui
在Ar的微波放电流下CH3CN的解离激发反应中观察到CN(B2Σ+–X2Σ+)和CH(A2Δ–X2Π)跃迁的高分辨率发射光谱。通过使用P 2 O 5 作为干燥剂除去起始材料中包含的和/或吸附在装置壁上的H 2 O分子。 Ar、PAr 的压力在 0.1–0.8 Torr 范围内。通过对观测光谱的模拟分析，确定CH(A2Δ)和CN(B2Σ+)态的浓度比NCH(A)/NCN(B)为0.09-0.41。结果表明，CN(B2Σ+)态是通过离子电子复合以及Ar亚稳态的能量转移而形成的。基于在没有干燥的系统中报告的 NCH(A)/NCN(B) 和 [N]/([N]+[C]) 比率之间的相关性 [Jpn. J.应用程序。物理。 40, 332 (2001)]，干燥系统中的 [N]/([N]+[C]) 比率预计为 ≈0.18。在该条件下制备的氢化非晶氮化碳薄膜...
High-resolution optical emission spectra of the CN(B2Σ+–X2Σ+) and CH(A2Δ–X2Π) transitions were observed in the dissociative excitation reaction of CH3CN with the microwave-discharge flow of Ar. The H2O molecules contained in the starting materials and/or adsorbed on the wall of the apparatus were removed by using P2O5 as a desiccant. The pressure of Ar, PAr, was in the range of 0.1–0.8 Torr. From the simulation analysis of the observed spectra, the ratio of the concentrations of the CH(A2Δ) and CN(B2Σ+) states, NCH(A)/NCN(B), was determined as 0.09–0.41. It was indicated that the CN(B2Σ+) state was formed via the ion–electron recombination as well as the energy transfer from the metastable state of Ar. Based on the correlation between the NCH(A)/NCN(B) and [N]/([N]+[C]) ratios reported in the system without desiccation [Jpn. J. Appl. Phys. 40, 332 (2001)], the [N]/([N]+[C]) ratio in the desiccated system was predicted to be ≈0.18. The hydrogenated-amorphous carbon nitride films prepared under the conditio...
M. Sato 等人：“基于基本驻波的准相位匹配，从 GaP(111) 基板上的 GaP/AIP 多层产生二次谐波”Jpn。
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N. Senguttuvan 等：“退火对布里奇曼法生长的 PbWO_4 单晶光学性能的影响”Jpn。
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影响因子：
1.5
作者：
Haruhiko Ito;H. Miki;K. Namiki;N. Ito;H. Saitoh
通讯作者：
Haruhiko Ito;H. Miki;K. Namiki;N. Ito;H. Saitoh