Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off
Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off
复制标题
辅助栅极 MOSFET 改善导通电阻和关断损耗权衡
DOI：
10.1109/led.2020.2991927
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发表时间：
2020
影响因子：
4.9
通讯作者：
Nishizawa Shin-ichi
中科院分区：
文献类型：
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作者：
Saito Wataru;Nishizawa Shin-ichi
辅助栅极MOSFET （AG）是一种具有最优栅极控制的新型结构，用于低压功率MOSFET的低功耗工作。第二通道和堆积层减少通道和漂移阻力。此外，AG-MOSFET的栅极控制降低了关断损耗。采用TCAD仿真分析了40和100 v级AG-MOSFET的特性。AG-MOSFET改善导通电阻和关断损耗权衡。仿真结果表明，对于40v级器件，导通电阻降低34%，关断损耗降低16%；对于100v级器件，导通电阻降低21%，关断损耗降低10%。
Assist Gate (AG) MOSFET is proposed for low power loss operation of low-voltage power MOSFETs by a new structure with the optimum gate control. The second channel and accumulation layer reduce the channel and drift resistances. In addition, the gate control of AG-MOSFET decreases turn-off loss. 40 and 100 V-class AG-MOSFET characteristics were analyzed using TCAD simulation. The AG-MOSFET improves on-resistance and turn-off loss trade-off. The simulation results show 34% lower on-resistance with 16% lower turn-off loss for 40 V-class device and 21% lower on-resistance with 10% lower turn-off loss for 100 V-class device.
一种新型双侧栅极 HiGT 和 SiC-SBD 混合功率模块
DOI：
10.23919/ispsd.2017.7988892
发表时间：
2017
期刊：
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)
影响因子：
--
作者：
Y. Takeuchi;T. Miyoshi;T. Furukawa;M. Shiraishi;M. Mori
通讯作者：
M. Mori