Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level
Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level
复制标题
In2O3和Ga2O3低温离子辐照后的电导率；
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
M. Grundmann
中科院分区：
文献类型：
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作者：
L. Vines;C. Bhoodoo;H. von Wenckstern;M. Grundmann
在35 K下，原位研究了n型In_2O_3和Ga_2O_3在MeV~(12)C和28Si离子轰击下的方阻演化。由于离子辐照，Ga2O_3的方阻增加了8个数量级以上，而In_2O_3表现出更复杂的缺陷演化，并且在最高剂量辐照时变得更导电。加热到室温时，方块电阻率有所降低，但Ga2O_3仍保持较高的电阻率，而In_2O_3的电阻率低于沉积样品。热导纳谱和深能级瞬变谱没有发现辐照到2×10~(12)cm−_2的新的缺陷能级。提出了一个较大的缺陷复合体优先在In_2O_3中产生施主类缺陷的模型，该模型可能揭示了导带内电荷中性能级的微观观点。
The evolution of sheet resistance of n-type In2O3 and Ga2O3 exposed to bombardment with MeV 12C and 28Si ions at 35 K is studied in situ. While the sheet resistance of Ga2O3 increased by more than eight orders of magnitude as a result of ion irradiation, In2O3 showed a more complex defect evolution and became more conductive when irradiated at the highest doses. Heating up to room temperature reduced the sheet resistivity somewhat, but Ga2O3 remained highly resistive, while In2O3 showed a lower resistance than as deposited samples. Thermal admittance spectroscopy and deep level transient spectroscopy did not reveal new defect levels for irradiation up to 2×1012 cm−2. A model where larger defect complexes preferentially produce donor like defects in In2O3 is proposed, and may reveal a microscopic view of a charge neutrality level within the conduction band, as previously proposed.
影响因子：
3.7
作者：
King, P. D. C.;Veal, T. D.;McConville, C. F.
通讯作者：
McConville, C. F.