Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs
Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs
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相对栅极位置对高性能 AlGaN/GaN HEMT 直流和射频特性的影响
DOI：
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发表时间：
2020
影响因子：
3.1
通讯作者：
D. Saha
中科院分区：
文献类型：
--
作者：
Y. Yadav;Bhanu B. Upadhyay;Jaya Jha;S. Ganguly;D. Saha
We have investigated the impact of relative gate position between source and drain on the DC and RF characteristics for AlGaN/GaN high electron mobility transistors. Devices with fixed source drain separation (<inline-formula> <tex-math notation="LaTeX">${L}_{ ext {SD}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$5~mu ext {m}$ </tex-math></inline-formula>, width (<inline-formula> <tex-math notation="LaTeX">${W}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">${2} imes {50},,mu ext {m}$ </tex-math></inline-formula> and gate length (<inline-formula> <tex-math notation="LaTeX">${L}_{G}$ </tex-math></inline-formula>) of 200 nm are fabricated and characterized. The relative position of the gate is varied with constant <inline-formula> <tex-math notation="LaTeX">${L}_{ ext {SD}}$ </tex-math></inline-formula>. The value of saturation drain current (<inline-formula> <tex-math notation="LaTeX">${I}_{ ext {DS}, ext {sat}}$ </tex-math></inline-formula>) and maximum transconductance (<inline-formula> <tex-math notation="LaTeX">${g}_{m, ext {max}}$ </tex-math></inline-formula>) change from 740 mA/mm and 168 mS/mm for gate to source separation (<inline-formula> <tex-math notation="LaTeX">${L}_{ ext {GS}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$3.8~mu ext {m}$ </tex-math></inline-formula> to 1071 mA/mm and 245 mS/mm for <inline-formula> <tex-math notation="LaTeX">${L}_{ ext {GS}} = {0.25},,mu ext {m}$ </tex-math></inline-formula>, respectively. The corresponding breakdown voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{ ext {br}}$ </tex-math></inline-formula>) significantly improves from 65 V (for <inline-formula> <tex-math notation="LaTeX">${L}_{ ext {GS}} = {3.8},,mu ext {m}$ </tex-math></inline-formula>) to 189 V (for <inline-formula> <tex-math notation="LaTeX">${L}_{ ext {GS}} = {0.25},,mu ext {m}$ </tex-math></inline-formula>). The unity current gain frequency (<inline-formula> <tex-math notation="LaTeX">${f}_{T}$ </tex-math></inline-formula>) is observed to remain constant at 55 GHz for all positions of the gate. However, output power density is found to increase from 3.8 to 5.1 W/mm for the same relative change in the gate position.
We have investigated the impact of relative gate position between source and drain on the DC and RF characteristics for AlGaN/GaN high electron mobility transistors. Devices with fixed source drain separation (<inline-formula> <tex-math notation="LaTeX">${L}_{ ext {SD}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$5~mu ext {m}$ </tex-math></inline-formula>, width (<inline-formula> <tex-math notation="LaTeX">${W}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">${2} imes {50},,mu ext {m}$ </tex-math></inline-formula> and gate length (<inline-formula> <tex-math notation="LaTeX">${L}_{G}$ </tex-math></inline-formula>) of 200 nm are fabricated and characterized. The relative position of the gate is varied with constant <inline-formula> <tex-math notation="LaTeX">${L}_{ ext {SD}}$ </tex-math></inline-formula>. The value of saturation drain current (<inline-formula> <tex-math notation="LaTeX">${I}_{ ext {DS}, ext {sat}}$ </tex-math></inline-formula>) and maximum transconductance (<inline-formula> <tex-math notation="LaTeX">${g}_{m, ext {max}}$ </tex-math></inline-formula>) change from 740 mA/mm and 168 mS/mm for gate to source separation (<inline-formula> <tex-math notation="LaTeX">${L}_{ ext {GS}}$ </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">$3.8~mu ext {m}$ </tex-math></inline-formula> to 1071 mA/mm and 245 mS/mm for <inline-formula> <tex-math notation="LaTeX">${L}_{ ext {GS}} = {0.25},,mu ext {m}$ </tex-math></inline-formula>, respectively. The corresponding breakdown voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{ ext {br}}$ </tex-math></inline-formula>) significantly improves from 65 V (for <inline-formula> <tex-math notation="LaTeX">${L}_{ ext {GS}} = {3.8},,mu ext {m}$ </tex-math></inline-formula>) to 189 V (for <inline-formula> <tex-math notation="LaTeX">${L}_{ ext {GS}} = {0.25},,mu ext {m}$ </tex-math></inline-formula>). The unity current gain frequency (<inline-formula> <tex-math notation="LaTeX">${f}_{T}$ </tex-math></inline-formula>) is observed to remain constant at 55 GHz for all positions of the gate. However, output power density is found to increase from 3.8 to 5.1 W/mm for the same relative change in the gate position.
影响因子：
4.9
作者：
Li, Lei;Nomoto, Kazuki;Xing, Huili Grace
通讯作者：
Xing, Huili Grace