MULTI-GATE MOSFET STRUCTURES WITH HIGH-K DIELECTRIC MATERIALS
MULTI-GATE MOSFET STRUCTURES WITH HIGH-K DIELECTRIC MATERIALS
复制标题
采用高 K 介电材料的多栅极 MOSFET 结构
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
R. Mishra
中科院分区：
文献类型：
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作者：
S. Tripathi;R. Mishra;R. Mishra
Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most important multigate structure is FinFET which shown better subthreshold swing (SS) and drain-induced barrier lowing (DIBL), which is possible with optimum ratio of gate length to Fin width. In this paper we have discussed the different FinFET structures with use of high K dielectric materials for performance improvement. Also the performance of Fin shaped GAA with gate oxide HfO2 are simulated and compared with conventional gate oxide SiO2 for the same structure. Index term: Silicon-On-Insulator(SOI), SOI FinFET, Bulk FinFET, Punchthrough stopper, Short channel effect, DIBL, Subthreshold Slope, High K dielectric material
DOI：
10.11203/jar.19.177
发表时间：
2004-09
期刊：
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影响因子：
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作者：
裕幸 飯田;菊男 竹田;武利 藤本
通讯作者：
裕幸 飯田;菊男 竹田;武利 藤本