BK channel activation: structural and functional insights.
BK channel activation: structural and functional insights.
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DOI：
10.1016/j.tins.2010.06.004
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发表时间：
2010-09
影响因子：
15.9
通讯作者：
Cui, Jianmin
中科院分区：
文献类型：
--
作者：
Lee, Urvi S.;Cui, Jianmin
电压和 Ca2+ 激活的 K+ (BK) 通道参与神经递质释放和神经元兴奋性的调节。在结构上，BK 通道与电压门控和配体门控 K+ 通道同源，具有电压传感器和孔作为跨膜结构域以及含有金属结合位点的胞质结构域。最近发表的 BK 通道的电子冷冻显微镜 (cryo-EM) 和 X 射线晶体结构首次观察了这些域的组装，证实了功能研究表明的通道门控过程中这些域之间的密切相互作用。这篇综述讨论了这些最新发现以及对 BK 通道门控的新认识以及对癫痫等疾病的影响，其中 BK 通道基因突变与这些疾病相关。
The voltage and Ca2+ activated K+ (BK) channels are involved in the regulation of neurotransmitter release and neuronal excitability. Structurally, BK channels are homologous to voltage- and ligand-gated K+ channels, having a voltage sensor and pore as the membrane-spanning domain and a cytosolic domain containing metal binding sites. Recently published electron cryomicroscopy (cryo-EM) and X-ray crystallographic structures of the BK channel provided the first look into the assembly of these domains, corroborating the close interactions among these domains during channel gating that have been suggested by functional studies. This review discusses these latest findings and an emerging new understanding about BK channel gating and implications for diseases such as epilepsy, in which mutations in BK channel genes have been associated.
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DOI：
10.1073/pnas.0711533105
发表时间：
2008-02-05
影响因子：
11.1
作者：
Clayton, Gina M.;Altieri, Steve;Morais-Cabral, Joao H.
通讯作者：
Morais-Cabral, Joao H.
MG2+增强了BK通道中的电压传感器/门耦合。
影响因子：
3.8
作者：
Horrigan, Frank T.;Ma, Zhongming
通讯作者：
Ma, Zhongming
影响因子：
16.8
作者：
Hou, Shangwei;Xu, Rong;Hoshi, Toshinori
通讯作者：
Hoshi, Toshinori
DOI：
10.1073/pnas.0800304105
发表时间：
2008-03-11
影响因子：
11.1
作者：
Hou, Shangwei;Xu, Rong;Hoshi, Toshinori
通讯作者：
Hoshi, Toshinori
影响因子：
4.8
作者：
Brenner, R;Jegla, TJ;Aldrich, RW
通讯作者：
Aldrich, RW