Semiconducting behavior in CeFe2Al10 and CeRu2Al10 single crystals
Semiconducting behavior in CeFe2Al10 and CeRu2Al10 single crystals
复制标题
CeFe2Al10 和 CeRu2Al10 单晶的半导体行为
DOI：
10.1088/1742-6596/200/1/012201
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
K. Kodama
中科院分区：
文献类型：
--
作者：
T. Takesaka;K. Oe;R. Kobayashi;Y. Kawamura;T. Nishioka;H. Kato;M. Matsumura;K. Kodama
We have firstly succeeded in growing orthorhombic YbFe2Al10-type CeFe2Al10 and CeRu2Al10 single crystals by Al self-flux method, and measured the electrical resistivity ρ and magnetic susceptibility χ. Both compounds show negative temperature coefficient in ρ above ~100 K. The ρ(T) of CeFe2Al10 shows a broad peak at around 100 K and increases again at low temperatures, suggesting semiconducting ground state. The ρ(T) of CeRu2Al10 shows an abrupt increase below T0=27.3 K and and metallic behavior at low temperatures. The χ(T) exhibits uniaxial magnetic anisotropy along the b-axis for CeFe2Alio and c-axis for CeRu2Al10. CeRu2Al10 shows a sudden drop at T0 in χ(T), indicating some kind of phase transition at T0- Since both compounds have smaller cell volumes than those expected from lanthanoid contraction, these anomalous behaviors should be related to the strong 4f- and conduction-electron hybridization.
影响因子：
3.7
作者：
N. Kurita;M. Hedo;M. Koeda;M. Kobayashi;H. Sato;H. Sugawara;Y. Uwatoko
通讯作者：
N. Kurita;M. Hedo;M. Koeda;M. Kobayashi;H. Sato;H. Sugawara;Y. Uwatoko