Novel high-temperature ferroelectric domain morphology in PbTiO3 ultrathin films.
Novel high-temperature ferroelectric domain morphology in PbTiO3 ultrathin films.
复制标题
PbTiO3 超薄膜中新型高温铁电畴形态。
DOI：
10.1039/c6cp08157f
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
D. Duffy
中科院分区：
文献类型：
--
作者：
J. Chapman;A. Kimmel;D. Duffy
铁电材料中的奇异畴形态是发展新型纳米电子学的一条令人兴奋的途径。在这项工作中，我们已经使用大尺度分子动力学构建的应变-温度相图的域形态的PbTiO 3薄膜。在居里温度Tc的温度范围内的应变值的宽区间采样，我们发现，外延应变诱导形成的各种闭合和面内域形态。局部应变和铁电-反铁畸变耦合在薄膜表面的应变介导的过渡序列的变化，这可以提供一个路线的实验观察的形态。值得注意的是，我们确定了一个新的纳米气泡域形态，是稳定的压缩应变PbTiO 3的高温制度。我们证明了纳米气泡畴形态的形成机制与磁通闭合畴壁的漂移有关，我们使用超环面矩来解释。这些结果提供了深入了解的局部行为和动力学的铁电畴在薄膜中开辟了潜在的应用气泡域的新技术和途径，以控制和利用新的现象在尺寸受限的材料。
Exotic domain morphologies in ferroic materials are an exciting avenue for the development of novel nanoelectronics. In this work we have used large scale molecular dynamics to construct a strain-temperature phase diagram of the domain morphology of PbTiO3 ultrathin films. Sampling a wide interval of strain values over a temperature range up to the Curie temperature Tc, we found that epitaxial strain induces the formation of a variety of closure- and in-plane domain morphologies. The local strain and ferroelectric-antiferrodistortive coupling at the film surface vary for the strain mediated transition sequence and this could offer a route for experimental observation of the morphologies. Remarkably, we identify a new nanobubble domain morphology that is stable in the high-temperature regime for compressively strained PbTiO3. We demonstrate that the formation mechanism of the nanobubble domains morphology is related to the wandering of flux closure domain walls, which we characterise using the hypertoroidal moment. These results provide insight into the local behaviour and dynamics of ferroelectric domains in ultrathin films to open up potential applications for bubble domains in new technologies and pathways to control and exploit novel phenomena in dimensionally constrained materials.
影响因子：
10.8
作者：
McGilly, L. J.;Gregg, J. M.
通讯作者：
Gregg, J. M.
影响因子：
41.2
作者：
Seidel, J.;Martin, L. W.;Ramesh, R.
通讯作者：
Ramesh, R.