Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect.
Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect.
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DOI：
10.1038/s41467-022-34177-w
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发表时间：
2022-11-09
影响因子：
16.6
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根据Onsager原理，一般导体的电阻R表现为外部磁场B的偶函数。只有在涉及铁磁性破坏的时间反转对称性（TRS）的特殊情况下，才会观察到R相对于B的奇分量。这种不寻常的现象被称为奇宇称磁阻 (OMR)，迄今为止非常微妙 (< 2%)，并且很难通过外部手段控制。在这里，我们报告了 InAs 量子阱边缘传输通道中高达 27% 的巨大 OMR，它被下面的铁磁半导体 (Ga,Fe)Sb 层的邻近效应磁化。结合实验结果和使用线性化玻尔兹曼方程的理论分析，我们发现一维（1D）InAs边缘通道中的磁邻近效应（MPE）和空间反演对称性（SIS）对TRS的同时破坏是这个巨大OMR的起源。我们还演示了使用边缘通道中的 TRS 或 SIS 电子门控来打开和关闭 OMR 的能力。这些发现提供了对具有强磁耦合的一维半导体系统的深入了解。由于时间反转和空间反转对称性的结合，磁阻（材料的电阻在施加的磁场下发生变化）通常是施加的磁场的偶函数。在这里，Takiguchi 等人在半导体量子阱的边缘通道中展示了尺寸显着的奇宇称磁阻。
According to Onsager’s principle, electrical resistance R of general conductors behaves as an even function of external magnetic field B. Only in special circumstances, which involve time reversal symmetry (TRS) broken by ferromagnetism, the odd component of R against B is observed. This unusual phenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (< 2%) and hard to control by external means. Here, we report a giant OMR as large as 27% in edge transport channels of an InAs quantum well, which is magnetized by a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sb layer. Combining experimental results and theoretical analysis using the linearized Boltzmann’s equation, we found that simultaneous breaking of both the TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry (SIS) in the one-dimensional (1D) InAs edge channels is the origin of this giant OMR. We also demonstrated the ability to turn on and off the OMR using electrical gating of either TRS or SIS in the edge channels. These findings provide a deep insight into the 1D semiconducting system with a strong magnetic coupling. Magnetoresistance, where the electric resistance of a material changes under an applied magnetic field, is typically an even function of the applied magnetic field, due to the combination of time reversal and spatial inversion symmetries. Here, Takiguchi et al show an odd-parity magnetoresistance of remarkable size in edge channels of a semiconductor quantum well.
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