Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor
Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor
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三氯化镓前驱体低温合成氮化镓纳米晶及表征
DOI：
10.1557/jmr.2004.0448
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
G. Rao
中科院分区：
文献类型：
--
作者：
F. S. Liu;Q. L. Liu;J. K. Liang;G. Song;L. Yang;J. Luo;Y. Q. Zhou;H. Dong;G. Rao
氮化镓 (GaN) 是通过三氯化镓与氨 (NH3) 在 500 至 1000 °C 的低温下反应 12 小时合成的。 X射线衍射、透射电子显微镜、红外和拉曼背散射光谱表明，合成的GaN粉末由具有纤锌矿型结构的单相纳米级微晶组成。晶体的平均尺寸随着反应温度的变化而减小，从 1000 °C 时的约 63 nm 减小到 500 °C 时的约 5 nm。 GaOCl和ε-Ga_2O_3是GaN合成过程中的中间产物。拉曼峰的特征位移与晶体尺寸的变化相关。仅在 1000 °C 合成的样品的室温光致发光光谱中观察到 GaN 在 361 nm 处的带边发射，而在 500 至 800 °C 合成的样品中出现了一个新的、宽的发射带，其中心范围为 827 至 765 nm。
Gallium nitride (GaN) has been synthesized by reacting gallium trichloride with ammonia (NH3) at low temperatures ranging from 500 to 1000 °C for 12 h. X-ray diffraction, transmission electron microscopy, infrared, and Raman backscattering spectra revealed that the synthesized GaN powder consists of single-phase nano-sized crystallites with the wurtzite-type structure. The average size of the crystals decreases with the reaction temperature from approximately ~63 nm at 1000 °C to ~5 nm at 500 °C. GaOCl and ∈-Ga_2O_3 are the intermediate products during synthesis of the GaN. Characteristic shifts of the Raman peaks are associated with the change in crystal size. The band-edge emission of GaN at 361 nm was observed on room temperature photoluminescence spectra exclusively for the sample synthesized at 1000 °C, while a new and broad emission band appeared with the center ranging from 827 to 765 nm for the samples synthesized between 500 and 800 °C.
影响因子：
4
作者：
NAKAMURA, S;MUKAI, T;SENOH, M
通讯作者：
SENOH, M