Growth of Double-Side Tl-2212 Thin Film on CeO2-Buffered MgO Substrate

Growth of Double-Side Tl-2212 Thin Film on CeO2-Buffered MgO Substrate
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CeO2 缓冲 MgO 基板上双面 Tl-2212 薄膜的生长

DOI:
10.4028/www.scientific.net/amr.194-196.2384
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发表时间:
2011-02
期刊:
Advanced Materials Research
影响因子:
--
通讯作者:
Yan, Shaolin
Yan, Shaolin
中科院分区:
其他
文献类型:
--
作者:
Xie, Qinglian;Zhang, Yuting;Fang, Fengcai;Huang, Guohua;Ji, Lu;Zhao, Xinjie;Fang, Lan;Yan, Shaolin

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The double-side Tl-2212 films were fabricated on CeO2-buffered MgO substrates by dc magnetron sputtering and post-annealing method. The RF magnetron sputtering technology was used to grow CeO2 buffer layers. XRD and SEM measurements showed that the CeO2 films on annealed MgO substrates were highly c-axis orientation, and the Tl-2212 superconducting films on both sides had similar morphology and crystalline structure. For both sides of Tl-2212 films, the critical transition temperatures (Tc) were above 106 K, and the critical current densities (Jc) were above 2.2 MA/cm2 (77 K, 0 T).
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