Silicon and the wide bandgap semiconductors, shaping the future power electronic device market
Silicon and the wide bandgap semiconductors, shaping the future power electronic device market
复制标题
硅和宽带隙半导体，塑造未来电力电子器件市场
DOI：
10.1109/ulis.2013.6523479
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
P. Gammon
中科院分区：
文献类型：
--
作者：
P. Gammon
本文针对宽带隙半导体 SiC 和 GaN 对 Si 日益严峻的挑战，回顾了电力电子器件市场的现状。预计未来十年，硅将继续在低压、高电压、高电流市场占据主导地位。然而，SiC 尤其有可能对 500-6.5 kV 市场、汽车和光伏转换器以及 PFC 电源等应用领域产生强有力的挑战。随着缺陷密度和外延层厚度等材料问题的改善，双极 SiC 器件的出现可能会在 10-20 年内看到它在高电压、高电流市场端的挑战。
In this paper, the current state of the power electronic device market is reviewed in light of the increased challenge upon Si from the wide bandgap semiconductors SiC and GaN. It is suggested that for the next ten years Si will continue its dominance both at the low voltage, and at the high voltage, high current ends of the market. However, SiC in particular is most likely to make a robust challenge upon the 500-6.5 kV market, in application areas such as automotive and photovoltaic converters and in PFC power supplies. As materials issues such as defect densities and epitaxial layer thicknesses improve then the emergence of bipolar SiC devices could in 10-20 years see it challenge in the high voltage, high current end of the market also.
影响因子：
4
作者：
P. Gammon;A. Pérez‐Tomás;M. Jennings;O. Guy;N. Rimmer;J. Llobet;N. Mestres;P. Godignon;M. Placidi;M. Zabala;J. Covington;P. Mawby
通讯作者：
P. Gammon;A. Pérez‐Tomás;M. Jennings;O. Guy;N. Rimmer;J. Llobet;N. Mestres;P. Godignon;M. Placidi;M. Zabala;J. Covington;P. Mawby