Topology Optimisation for Compliant Hip Implant Design and Reduced Strain Shielding.
Topology Optimisation for Compliant Hip Implant Design and Reduced Strain Shielding.
复制标题
DOI:
10.3390/ma14237184
复制
发表时间:
2021-11-25
期刊:
影响因子:
--
通讯作者:
van Arkel RJ
中科院分区:
文献类型:
--
作者:
Tan N;van Arkel RJ
Stiff total hip arthroplasty implants can lead to strain shielding, bone loss and complex revision surgery. The aim of this study was to develop topology optimisation techniques for more compliant hip implant design. The Solid Isotropic Material with Penalisation (SIMP) method was adapted, and two hip stems were designed and additive manufactured: (1) a stem based on a stochastic porous structure, and (2) a selectively hollowed approach. Finite element analyses and experimental measurements were conducted to measure stem stiffness and predict the reduction in stress shielding. The selectively hollowed implant increased peri-implanted femur surface strains by up to 25 percentage points compared to a solid implant without compromising predicted strength. Despite the stark differences in design, the experimentally measured stiffness results were near identical for the two optimised stems, with 39% and 40% reductions in the equivalent stiffness for the porous and selectively hollowed implants, respectively, compared to the solid implant. The selectively hollowed implant’s internal structure had a striking resemblance to the trabecular bone structures found in the femur, hinting at intrinsic congruency between nature’s design process and topology optimisation. The developed topology optimisation process enables compliant hip implant design for more natural load transfer, reduced strain shielding and improved implant survivorship.
登录
查看更多内容
影响因子:
4.8
作者:
Jun, Yongtae;Choi, Kuiwoon
通讯作者:
Choi, Kuiwoon
DOI:
10.1007/s00170-020-06323-5
发表时间:
2021-01-06
影响因子:
3.4
作者:
Abate, Kalayu Mekonen;Nazir, Aamer;Jeng, Jeng-Ywan
通讯作者:
Jeng, Jeng-Ywan
影响因子:
11
作者:
Ghouse, Shaaz;Babu, Sarat;Jeffers, Jonathan R. T.
通讯作者:
Jeffers, Jonathan R. T.
影响因子:
2.4
作者:
Bergmann, G;Deuretzbacher, G;Duda, GN
通讯作者:
Duda, GN
影响因子:
3.5
作者:
Bolland, Ben J. R. F.;Wilson, Matthew J.;Gie, Graham A.
通讯作者:
Gie, Graham A.