Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor.
Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor.
复制标题
Si:HfO2 铁电场效应晶体管的亚纳秒开关。
DOI：
10.1021/acs.nanolett.2c04706
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发表时间：
2023
期刊：
影响因子：
10.8
通讯作者：
E. Yalon
中科院分区：
文献类型：
--
作者：
M. Dahan;H. Mulaosmanovic;O. Levit;Stefan Dünkel;S. Beyer;E. Yalon
铁电掺杂的HfO₂的发现使得可扩展且与CMOS兼容的铁电场效应晶体管（FeFET）技术得以出现，该技术有可能满足对快速、低功耗、低成本和高密度非易失性存储器以及神经形态器件日益增长的需求。尽管在过去几年中HfO₂ FeFET已被广泛研究，但其基本的开关速度仍有待探索。重要的是，迄今为止在基于HfO₂的FeFET中所展示的最短极化时间约为10纳秒。在此，我们报道单个亚纳秒脉冲能够使基于HfO₂的FeFET完全开关。我们还研究了在11个数量级的时间范围（300皮秒到8秒）内的极化开关动力学，并发现了一种非常陡峭的时间 - 电压关系，在如此宽的脉冲宽度范围内，经典成核理论能够对其进行描述。这些结果展示了FeFET的高速能力，并有助于更好地理解其基本的极化开关速度极限和开关动力学。
The discovery of ferroelectric doped HfO2 enabled the emergence of scalable and CMOS-compatible ferroelectric field-effect transistor (FeFET) technology which has the potential to meet the growing need for fast, low-power, low-cost, and high-density nonvolatile memory, and neuromorphic devices. Although HfO2 FeFETs have been widely studied in the past few years, their fundamental switching speed is yet to be explored. Importantly, the shortest polarization time demonstrated to date in HfO2-based FeFET was ∼10 ns. Here, we report that a single subnanosecond pulse can fully switch HfO2-based FeFET. We also study the polarization switching kinetics across 11 orders of magnitude in time (300 ps to 8 s) and find a remarkably steep time-voltage relation, which is captured by the classical nucleation theory across this wide range of pulse widths. These results demonstrate the high-speed capabilities of FeFETs and help better understand their fundamental polarization switching speed limits and switching kinetics.
影响因子：
64.8
作者：
Cheema, Suraj S.;Kwon, Daewoong;Salahuddin, Sayeef
通讯作者：
Salahuddin, Sayeef
影响因子：
34.3
作者：
Khan, Asif Islam;Keshavarzi, Ali;Datta, Suman
通讯作者：
Datta, Suman