Phonon-Fostered Valley Polarization of Interlayer Excitons in van der Waals Heterostructures
Phonon-Fostered Valley Polarization of Interlayer Excitons in van der Waals Heterostructures
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范德华异质结构中层间激子的声子促进谷极化
DOI：
10.1021/acs.jpcc.2c05113
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发表时间：
2022-10
期刊：
影响因子：
--
通讯作者：
Fanyao Qu
中科院分区：
文献类型：
--
作者：
David S. Br;ao;Eronildo C. Castro;Hao Zeng;Jianhua Zhao;Ginetom S. Diniz;Jiyong Fu;A. L. A. Fonseca;Celso A. N. Junior;Fanyao Qu
We report valley dynamics of spin-singlet (IXS) and spin-triplet (IXT) interlayer excitons in MoS2/WS2heterostructures subjected to an exchange field. Because of their interlayer character, they possess long valley coherence time in addition to long radiative lifetimes, especially for the IXT, which is crucial for valley pseudospin manipulation. Furthermore, the excitong-factors (gIXS13.4 andgIXT17.6) that are more than three times larger than that of intralayer exciton lead to giant valley Zeeman splitting (0.78–1.02 meV/T). Subjected to an exchange field, the competitive interplay among radiative relaxation, thermal excitation between IXSand IXT, and phonon-assisted intervalley scattering significantly enhance photoluminescence intensity (up to 325% for IXSand 1075% for IXT) in the α-valley, while suppressing it in the β-valley. Consequently, the valley polarization of IXSand IXTemissions abruptly converges to unity at low temperatures. At a critical exchange field, valley-selective switching of interlayer exciton states, from IXTto IXSin the β-valley, occurs. Under such a condition, valley polarization retains very high values, above 90% for IXTand 85% for IXSat room temperature. These attractive characteristics make interlayer excitons in MoS2/WS2heterostructures promising for quantum applications.
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