Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications
Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications
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用于硅光子学应用的 200 mm 绝缘体上锗 (GeOI) 基板的结构和光学特性
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
H. Sigg
中科院分区：
文献类型：
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作者：
V. Reboud;J. Widiez;J. Hartmann;G. Osvaldo Dias;D. Fowler;A. Chelnokov;A. Gassenq;K. Guilloy;N. Pauc;V. Calvo;R. Geiger;T. Zabel;J. Faist;H. Sigg
与微电子兼容的集成激光源是目前硅光子学面临的主要挑战之一。利用Smart CutTM技术，我们首次制造了200毫米的光学绝缘体上锗（GeOI）衬底，该衬底由一层厚的锗（通常大于500 nm）组成，上面是一层厚的埋埋氧化层（约1 μ m）。在此基础上，我们制作了具有高效Bragg镜腔的悬浮微桥。当制造具有足够高的拉伸应变量的悬浮膜以将Ge转化为直接带隙材料时，Ge层的高结晶质量应该有助于避免机械故障。光学GeOI工艺的可行性已经成功证明，为基于高张力（由于悬浮膜）和/或掺杂锗的新型发光器件的晶圆级制造开辟了道路。
Integrated laser sources compatible with microelectronics represent currently one of the main challenges for silicon photonics. Using the Smart CutTM technology, we have fabricated for the first time 200 mm optical Germanium-On-Insulator (GeOI) substrates which consist of a thick layer of germanium (typically greater than 500 nm) on top of a thick buried oxide layer (around 1 µm). From this, we fabricated suspended microbridges with efficient Bragg mirror cavities. The high crystalline quality of the Ge layer should help to avoid mechanical failure when fabricating suspended membranes with amounts of tensile strain high enough to transform Ge into a direct bandgap material. Optical GeOI process feasibility has successfully been demonstrated, opening the way to waferscale fabrication of new light emitting devices based on highly-tensely strained (thanks to suspended membranes) and/or doped germanium.
影响因子：
3.2
作者：
O. Aldaghri;Z. Ikonić;R. Kelsall
通讯作者：
O. Aldaghri;Z. Ikonić;R. Kelsall