Enhanced photoelectrochemical performance of hydrogenated ZnO hierarchical nanorod arrays

Enhanced photoelectrochemical performance of hydrogenated ZnO hierarchical nanorod arrays
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氢化ZnO分级纳米棒阵列的增强光电化学性能

DOI:
10.1016/j.jpowsour.2013.02.062
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发表时间:
2013-09
影响因子:
9.2
通讯作者:
Gong, Qiaojuan
Gong, Qiaojuan
中科院分区:
工程技术2区
文献类型:
--
作者:
Yao, Chenzhong;Wei, Bohui;Ma, Huixuan;Li, Hui;Meng, Lixin;Zhang, Xisheng;Gong, Qiaojuan

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首次报道了具有增强光电化学性能的氢化ZnO(H-ZnO)分级纳米棒阵列(HNRA)。通过在氢气气氛中在350 °C下将ZnO纳米棒阵列(NRA)和HNRA退火60 min来获得H-ZnO样品。电化学阻抗测试表明,H-ZnO HNRA的施主密度达到5.1 × 1018 cm-3,高于其他ZnO样品。这些H-ZnO HNRA在1.23 V vs. RHE下产生1.72 mA cm-2的改善的光电流密度,并且入射光子-电流-转换效率(IPCE)值在300至370 nm的波长范围内均匀地高于90%,其显著高于原始ZnO NRA、ZnO HNRA和H-ZnO NRA。提高ZnO电极材料的光电化学性能的能力可能为高性能光伏电池开辟新的机会。
Hydrogenated ZnO (H-ZnO) hierarchical nanorod arrays (HNRAs) with enhanced photoelectrochemical performance have been reported for the first time. The H-ZnO samples were obtained by annealing the ZnO nanorod arrays (NRAs) and HNRAs in hydrogen atmosphere at 350 °C for 60 min. The electrochemical impedance measurements indicate the donor density of H-ZnO HNRAs achieved 5.1 × 1018cm−3, which is higher than those of other ZnO samples. These H-ZnO HNRAs yields an improved photocurrent density of 1.72 mA cm−2at 1.23 V vs. RHE, and the incident-photon-to-current-conversion efficiency (IPCE) values uniformly higher than 90% in the wavelength range from 300 to 370 nm, which are substantially higher than the pristine ZnO NRAs, ZnO HNRAs and H-ZnO NRAs. The ability to improve the photoelectrochemical properties of ZnO electrode materials may open up new opportunities for high-performance photovoltaic cells.
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