Intersubband all-optical switching based on Coulomb-induced optical nonlinearities in GaN/AlGaN coupled quantum wells
Intersubband all-optical switching based on Coulomb-induced optical nonlinearities in GaN/AlGaN coupled quantum wells
复制标题
基于 GaN/AlGaN 耦合量子阱中库仑诱导光学非线性的子带间全光开关
DOI：
10.1088/0268-1242/21/8/022
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发表时间：
2006
影响因子：
1.9
通讯作者：
R. Paiella
中科院分区：
文献类型：
--
作者：
Y. Li;R. Paiella
宽导带偏置GaN/AlGaN量子威尔斯阱中的子带间跃迁（ISB）由于其超快的弛豫时间和极大的设计灵活性，在光纤网络的全光开关应用中具有广阔的应用前景。在这里，我们描述了一种新的方法，交叉吸收调制与这些材料，其中光控制脉冲被用来产生一个大的斯塔克移位的子带间的吸收光谱，通过重新分配的电子在耦合量子威尔斯。氮化物异质结构的本征极化场强烈增强了这种机制。基于薛定谔方程、泊松方程和载流子密度速率方程的自洽时域解的数值模型已经被开发用于设计针对该应用优化的耦合量子威尔斯阱。模拟结果表明，在这些结构中的饱和强度是30倍以上的非耦合GaN/AlGaN量子威尔斯的交叉吸收调制的情况下相比，小。
Intersubband (ISB) transitions in wide-conduction-band-offset GaN/AlGaN quantum wells are promising for all-optical switching applications in fibre-optic networking, due to their ultrafast relaxation times and great design flexibility. Here we describe a novel approach to cross-absorption modulation with these materials, in which optical control pulses are used to produce a large Stark shift of the intersubband absorption spectrum through a redistribution of electrons in coupled quantum wells. This mechanism is strongly enhanced by the intrinsic polarization fields of nitride heterostructures. A numerical model based on the self-consistent time-domain solution of the Schrödinger, Poisson and carrier-density rate equations has been developed to design coupled quantum wells optimized for this application. Simulations indicate that in these structures the saturation intensity is over 30 times smaller compared to the case of cross-absorption modulation in uncoupled GaN/AlGaN quantum wells.
影响因子：
4
作者：
Hamazaki, J;Matsui, S;Kishino, K
通讯作者：
Kishino, K
影响因子：
3.7
作者：
Bernardini, F;Fiorentini, V;Vanderbilt, D
通讯作者：
Vanderbilt, D