Cu-induced Seebeck peak in HMS/Si film
Cu-induced Seebeck peak in HMS/Si film
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HMS/Si 薄膜中 Cu 诱导的塞贝克峰
DOI：
10.1142/s0217984914501760
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发表时间：
2014-09
影响因子：
1.9
通讯作者：
侯清润
中科院分区：
文献类型：
--
作者：
侯清润
众所周知，铝（Al）、硼（B）和铜（Cu）分别是硅（Si）中浅能级和深能级的受主杂质。因此，Si中浅能级的Al和B杂质在室温下基本上完全电离，而Si中深能级的Cu杂质在较高温度下基本被电离。本文采用Al、B、Cu共掺杂Si层作为势垒层，采用高锰硅化物层(HMS)作为阱层。 Al 和 Cu 调制掺杂薄膜的塞贝克系数 (S) HMS/Si:(Al + Cu) 在 583 K 以上急剧增加，在 683 K 时达到峰值 0.300 mV/K，然后随着温度的进一步升高而减小。然而，随着塞贝克系数的大幅增加，电阻率(R)仍然小于仅Al调制掺杂薄膜HMS/Si:Al的电阻率。在 (B + Al + Cu) 调制掺杂薄膜 Si:(B + Al + Cu)/HMS/Si:(B + Al + Cu) 中也观察到 Cu 诱导的塞贝克峰 (733 K 时 Smax = 0.303 mV/K) 以及电阻率的降低，其中 B 用于进一步降低电阻率。结果，热电功率因数（PF = S2/R）大大提高，在733 K时可达3.140×10-3 W/m-K2，大于HMS块体材料。
It is well known that aluminum (Al), boron (B) and copper (Cu) are acceptor impurities with shallow- and deep-energy levels in silicon (Si), respectively. Thus, Al and B impurities with shallow-energy levels in Si are essentially completely ionized at room temperature while Cu impurities with deep-energy levels in Si at higher temperature. In this paper, Al, B and Cu co-doped Si layer is used as a barrier layer while the higher manganese silicide layer (HMS) as a well layer. The Seebeck coefficient (S) of Al and Cu modulation doped film, HMS/Si:(Al + Cu), increases sharply above 583 K, reaches a peak value of 0.300 mV/K at 683 K, and then decreases with further increasing temperature. Concomitance with the great increase in Seebeck coefficient, however, the electrical resistivity (R) is still smaller than that of only Al modulation doped film, HMS/Si:Al. The Cu-induced Seebeck peak, Smax = 0.303 mV/K at 733 K, and reduction in electrical resistivity are also observed in (B + Al + Cu) modulation doped film, Si:(B + Al + Cu)/HMS/Si:(B + Al + Cu), where B is used to reduce the electrical resistivity further. As a result, the thermoelectric power factor (PF = S2/R) is greatly enhanced and can reach 3.140 × 10-3 W/m-K2 at 733 K, which is larger than that of HMS bulk material.
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影响因子：
--
作者：
E. Conwell
通讯作者：
E. Conwell
DOI：
--
发表时间：
2008-03
期刊：
Bulletin of the American Physical Society
影响因子：
--
作者：
A. Hochbaum;Renkun Chen;R. Delgado;W. Liang;E. Garnett;M. Najarian;A. Majumdar;P. Yang
通讯作者：
A. Hochbaum;Renkun Chen;R. Delgado;W. Liang;E. Garnett;M. Najarian;A. Majumdar;P. Yang
影响因子：
2.1
作者：
Goldsmid, H. J.
通讯作者：
Goldsmid, H. J.
影响因子：
1.5
作者：
O. Yamashita;N. Sadatomi
通讯作者：
O. Yamashita;N. Sadatomi
影响因子：
1.2
作者：
Q. Hou;B. Gu;Y. Chen;Y. J. He
通讯作者：
Q. Hou;B. Gu;Y. Chen;Y. J. He