Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation.
Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation.
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DOI：
10.1038/srep12014
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发表时间：
2015-07-08
影响因子：
4.6
通讯作者：
Jie Wang Q
中科院分区：
文献类型：
--
作者：
Yu X;Shen Y;Liu T;Wu TT;Jie Wang Q
石墨烯由于其优异的性能，如宽带吸收和高迁移率，被认为是一种有吸引力的光电应用材料，如光电探测器。然而，在常规石墨烯光电探测器的基本和实际方面仍然存在挑战，常规石墨烯光电探测器通常依赖于光电导操作模式，其具有例如高暗电流的缺点。在这里，我们证明了光伏模式操作的石墨烯p-n结制造的一个简单但有效的电子辐照方法，诱导本征p型石墨烯的n型掺杂。结形成的物理机制是由于电子辐照引起的衬底选通效应。这种类型的光电探测器获得了光响应，因为光激发的电子-空穴对可以在石墨烯p-n结中通过内建电势分离。所制造的石墨烯p-n结光电探测器在室温下表现出高达约3 × 1010 Jones（cm Hz 1/2 W−1）的高探测率，这与传统的III-V光电探测器相当。所展示的用于获得石墨烯p-n结的新颖且简单的方案可用于其他光电器件，例如太阳能电池，并可应用于其他基于二维材料的器件。
Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.
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影响因子：
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