N-type graphene induced by dissociative H₂ adsorption at room temperature.
N-type graphene induced by dissociative H₂ adsorption at room temperature.
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DOI：
10.1038/srep00690
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发表时间：
2012
影响因子：
4.6
通讯作者：
Park, Yung Woo
中科院分区：
文献类型：
--
作者：
Kim, Byung Hoon;Hong, Sung Ju;Baek, Seung Jae;Jeong, Hu Young;Park, Noejung;Lee, Muyoung;Lee, Sang Wook;Park, Min;Chu, Seung Wan;Shin, Hyeon Suk;Lim, Jeongmin;Lee, Jeong Chul;Jun, Yongseok;Park, Yung Woo
由于石墨烯的电子结构在器件应用中不可或缺的调制作用，以及石墨烯作为储氢材料的可能性，氢和石墨烯之间的相互作用的研究越来越有必要。在这里，我们报告了分子氢在石墨烯上的行为，利用单层、双层和多层石墨烯片的栅极电压依赖电阻作为H2气体压力从300 K到345 K高达24 bar的函数。H2暴露后，电荷中性点向负栅极电压区移动，表明掺杂n型，并且拉曼特征发生明显变化，多层石墨烯层间距离增加，d间距减小。这些结果表明，由于石墨烯上存在空位缺陷，解离H2吸附的发生。
Studies of the interaction between hydrogen and graphene have been increasingly required due to the indispensable modulation of the electronic structure of graphene for device applications and the possibility of using graphene as a hydrogen storage material. Here, we report on the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphene sheets as a function of H2 gas pressure up to 24 bar from 300 K to 345 K. Upon H2 exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping, and distinct Raman signature changes, increases in the interlayer distance of multi-layer graphene, and a decrease in the d-spacing occur, as determined by TEM. These results demonstrate the occurrence of dissociative H2 adsorption due to the existence of vacancy defects on graphene.
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影响因子：
10.8
作者：
Kester M;Heakal Y;Fox T;Sharma A;Robertson GP;Morgan TT;Altinoğlu EI;Tabaković A;Parette MR;Rouse SM;Ruiz-Velasco V;Adair JH
通讯作者：
Adair JH
影响因子：
3.7
作者：
Ferrari, AC;Robertson, J
通讯作者：
Robertson, J
影响因子：
10.9
作者：
Allouche, A.;Ferro, Y.
通讯作者：
Ferro, Y.
影响因子：
3.7
作者：
Ao, Z. M.;Peeters, F. M.
通讯作者：
Peeters, F. M.
影响因子：
3.7
作者：
Aga, Rachel S.;Fu, C. L.;Morris, James R.
通讯作者：
Morris, James R.